单片FET混频器与共面技术之间转换的V和C波段

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI:10.1109/MCS.1996.506311

M. J. Rosário, J. Bernardino, F. Fortes, R. Kulke, T. Sporkman, J. C. Freire

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引用次数: 2

摘要

本文介绍了一种用于V波段和C波段信号转换的单场效应管共面混频器的设计。在谐波平衡仿真的基础上，采用了逐级设计技术。混频器非线性器件是一个具有0.15 /spl mu/m t型栅极的PMHFET。设计、制造和测试了两种不同的拓扑结构:冷混合器和排水混合器。混频器在最宽的带宽上优化了最小的转换损失，以便在大量应用中使用。实验表明:对于冷混频器，在8 GHz频段作为上、下变频器，转换损耗在8 ~ 10 dB范围内;并在4 GHz频段上为漏极混频器提供2.5 dB作为下变频器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Monolithic single FET mixers with coplanar technology to convert between V and C band

In this paper the design of single FET coplanar mixers to convert signals between V and C band is presented. A step by step design technique was used, based on harmonic balance simulation. The mixer non-linear device is a PMHFET with a 0.15 /spl mu/m T-gate. Two different topologies were designed, fabricated and tested: cold mixer and drain mixer. The mixers were optimised for minimum conversion losses on the widest possible bandwidth in order to be used on a large number of applications. The experiments show: for the cold mixer, a conversion loss on a 8 GHz band in the range of 8 to 10 dB both as up and downconverter; and 2.5 dB on a 4 GHz band for the drain mixer as down converter.

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来源期刊

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

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