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2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)最新文献

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Study of Total Ionizing Dose Effects in 65nm Digital Circuits with the DRAD Digital RADiation Test Chip 基于DRAD数字辐射测试芯片的65nm数字电路总电离剂量效应研究
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696111
L. M. J. Casas, D. Ceresa, S. Kulis, S. Miryala, J. Christiansen, R. Francisco, D. Gnani
{"title":"Study of Total Ionizing Dose Effects in 65nm Digital Circuits with the DRAD Digital RADiation Test Chip","authors":"L. M. J. Casas, D. Ceresa, S. Kulis, S. Miryala, J. Christiansen, R. Francisco, D. Gnani","doi":"10.1109/RADECS.2017.8696111","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696111","url":null,"abstract":"Radiation damage to electronic components is one of the main concerns for LHC (Large Hadron Collider) on-detector ASIC design engineers. Studies are needed in order to achieve the radiation hardness required by the chips used in key sub-detectors of ATLAS and CMS upgrades. A Digital RADiation (DRAD) test chip has been specifically designed to study the impact of Total Ionizing Dose (TID) on digital logic gates in a 65nm CMOS technology. Nine different versions of standard cell libraries are studied in this chip, basically differing in the device dimensions, $text{V}_{mathbf {t, }}$flavor and layout of the device. Each library has eighteen test structures specifically designed to characterize delay degradation and power consumption of the standard cells. They are based on delay chains and ring oscillators with different gates, as well as specific test structures for the measurement of hold and setup time of sequential elements. Specific high speed structures (VCO and counters) are included for future high speed optical links chips. The test structures have been optimized and verified using 200 and 500 Mrad transistor models from the radiation working group of the RD53 collaboration. A test system has been developed for the DRAD chip to enable radiation tests to be performed in X-ray facilities. Results up to 1Grad under different conditions (temperature, bias and annealing) are reported.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125733403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Dynamic SEE Testing of Selected Architectural Features of Xilinx 28 nm Virtex-7 FPGAs Xilinx 28纳米Virtex-7 fpga选定架构特征的动态SEE测试
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696210
G. Swift, S. Stone, S. E. García, Kevin W. Wray, W. Rowe, Krysten H. Pfau, Robert Liu, J. Holden, Asa Angeles, Barry L. Willits, Kyle P. Robinson, Andrés Pérez-Celis, M. Wirthlin
{"title":"Dynamic SEE Testing of Selected Architectural Features of Xilinx 28 nm Virtex-7 FPGAs","authors":"G. Swift, S. Stone, S. E. García, Kevin W. Wray, W. Rowe, Krysten H. Pfau, Robert Liu, J. Holden, Asa Angeles, Barry L. Willits, Kyle P. Robinson, Andrés Pérez-Celis, M. Wirthlin","doi":"10.1109/RADECS.2017.8696210","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696210","url":null,"abstract":"Recent proton and heavy ion SEE data are presented for selected Virtex-7 architectural features requiring dynamic in-beam testing: I/O blocks in various modes, IOSERDES, digital- and phase-locked loop clocks, and block memory’s error correction circuitry.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121271389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Radiation-Induced Attenuation Data of Polarization-Maintaining Fibres 保偏光纤的辐射诱导衰减数据
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696161
M. Caussanel, G. Beauvois, H. Duval, S. Grieu, G. Montay, O. Gilard
{"title":"Radiation-Induced Attenuation Data of Polarization-Maintaining Fibres","authors":"M. Caussanel, G. Beauvois, H. Duval, S. Grieu, G. Montay, O. Gilard","doi":"10.1109/RADECS.2017.8696161","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696161","url":null,"abstract":"Radiation-induced attenuation measurements have been carried out on four different commercial optical fibres, three of them being polarization-maintaining. Irradiations have employed a 60Co gamma-ray source and in order to perform these in situ measurements, two optical setups have been developed. First, the DFB bench operates at 1542 nm with a laser chip injecting in the DUT a few tens of mW. Second, the halogen bench works with a white light source whose spectrum is filtered from 400 to 1550 nm. Optical power injected into the DUT is less than 10 nW in a spectral band 2–3 nm wide. Comparing measurements of both benches around 1540 nm allows to reveal photobleaching effect within some commercial optical fibres. A strong radiation-induced absorption band centered around 1250 nm has been observed during the irradiation of one fibre. To our knowledge, it cannot be tied, at this time, to any clearly identified color center.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121308902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Superimposed In-Circuit Fault Mitigation for Dynamically Reconfigurable FPGAs 动态可重构fpga的叠加电路故障缓解
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696242
Alexandra Kourfali, D. M. Codinachs, D. Stroobandt
{"title":"Superimposed In-Circuit Fault Mitigation for Dynamically Reconfigurable FPGAs","authors":"Alexandra Kourfali, D. M. Codinachs, D. Stroobandt","doi":"10.1109/RADECS.2017.8696242","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696242","url":null,"abstract":"Reassuring fault tolerance in computing systems is the most important problem for mission critical space components. With the rise in interest of commercial SRAM-based FPGAs, it is crucial to provide runtime reconfigurable recovery from a failure. In this paper we propose a superimposed virtual coarse-grained reconfigurable architecture, embedded an on-demand three level fault-mitigation technique tailored for FPGA overlays. The proposed method performs run-time recovery via Microscrubbing. This approach can achieve up to 3× faster runtime recovery with 10.2× less resources in FPGA devices, by providing integrated layers of fault mitigation.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117094083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microdose effects in SRAM cells under heavy ion irradiation 重离子辐照下SRAM细胞的微剂量效应
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696109
A. Boruzdina, A. Yanenko, A. Ulanova, A. Chumakov, D. Bobrovskiy, V. M. Uzhegov
{"title":"Microdose effects in SRAM cells under heavy ion irradiation","authors":"A. Boruzdina, A. Yanenko, A. Ulanova, A. Chumakov, D. Bobrovskiy, V. M. Uzhegov","doi":"10.1109/RADECS.2017.8696109","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696109","url":null,"abstract":"The paper presents experimental data of single event hard errors (SEHEs) in commercial SRAM cells during SEE testing and TID tests. It is shown that the numbers of faulty cells under ion and under gamma irradiations are in qualitative agreement.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115527330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Single-Event Transient Analysis and Hardening in a 180 nm CMOS Embedded Low-Dropout Regulator 180nm CMOS嵌入式低差稳压器的单事件瞬态分析和硬化
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696118
Liang Wang, Xupeng Han, Yuanfu Zhao, Qiang Bian, S. Yue, Shijin Lu, Lei Shu, Jiaqi Liu, Tongde Li
{"title":"Single-Event Transient Analysis and Hardening in a 180 nm CMOS Embedded Low-Dropout Regulator","authors":"Liang Wang, Xupeng Han, Yuanfu Zhao, Qiang Bian, S. Yue, Shijin Lu, Lei Shu, Jiaqi Liu, Tongde Li","doi":"10.1109/RADECS.2017.8696118","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696118","url":null,"abstract":"SET sensitivity of a 180 nm CMOS embedded LDO is studied by experiments and simulations. Different output responses for different block striking are observed and methods to mitigate each influence are given.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116162335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Destructive Single-Events and Latchup in Radiation-Hardened Switching Regulators 辐射强化开关稳压器中的破坏性单事件和闭锁
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696237
Sergeh Vartanian, G. Allen, F. Irom, L. Scheick, S. Hart, N. V. Vonno, L. Pearce
{"title":"Destructive Single-Events and Latchup in Radiation-Hardened Switching Regulators","authors":"Sergeh Vartanian, G. Allen, F. Irom, L. Scheick, S. Hart, N. V. Vonno, L. Pearce","doi":"10.1109/RADECS.2017.8696237","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696237","url":null,"abstract":"Single-event destructive behavior and latchup has been observed in two separate radiation-hardened switching regulators. We discuss the test conditions and observed results.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114643058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Effective Characterization of Radiation-induced SET on Flash-based FPGAs 基于flash的fpga上辐射诱导SET的有效表征
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696255
L. Sterpone, S. Azimi
{"title":"Effective Characterization of Radiation-induced SET on Flash-based FPGAs","authors":"L. Sterpone, S. Azimi","doi":"10.1109/RADECS.2017.8696255","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696255","url":null,"abstract":"Single Event Transients (SETs) are one of the major concern for Flash-based Field Programmable Gate Arrays (FPGAs). In this paper, we propose a new analysis to characterize the SET phenomena within Flash-based FPGAs.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127458330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of Image Lag Degradation in PPD CISs Induced by Total Ionizing Dose and Displacement Radiation Damage 总电离剂量和位移辐射损伤诱发PPD CISs图像滞后退化分析
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696262
Zujun Wang, Yuanyuan Xue, Jing Liu, Wei Chen, Wuying Ma, Baoping He, Zhibin Yao, Jiangkun Sheng
{"title":"Analysis of Image Lag Degradation in PPD CISs Induced by Total Ionizing Dose and Displacement Radiation Damage","authors":"Zujun Wang, Yuanyuan Xue, Jing Liu, Wei Chen, Wuying Ma, Baoping He, Zhibin Yao, Jiangkun Sheng","doi":"10.1109/RADECS.2017.8696262","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696262","url":null,"abstract":"The experiments of the total ionizing dose (TID) and displacement radiation effects on the pinned photodiode (PPD) CMOS image sensors (CISs) are presented. The CISs are manufactured using a standard $0.18 mu text{m}$ CMOS technology with 4 Megapixels and 4-transistor PPD pixel architecture. The image lag degradation induced by TID damage is analyzed by exposing the 60Co $gamma$ rays with different biased conditions. The experimental results show that the degradation of the biased CIS are more severe than that of the unbiased CIS. The image lag degradation versus the TID at the dose rates of 0.1, 1.0 and 10.0 rad(Si)/s are compared. The image lag degradation induced by displacement damage is also investigated by the proton and neutron radiation. The image lag degradation mechanisms caused by 60Co $gamma$ ray, proton, and neutron radiation are analyzed with the TCAD simulation and the radiation particle transportation simulation using GEANT 4.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126560052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Radiation Effects on 1 Mb HfO2-based Resistive Memory 辐射对1mb hfo2基电阻式存储器的影响
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696126
J. Bi, Feng Zhang, Li Chen, Yuan Duan, K. Xi, Bo Li, Ming Liu
{"title":"Radiation Effects on 1 Mb HfO2-based Resistive Memory","authors":"J. Bi, Feng Zhang, Li Chen, Yuan Duan, K. Xi, Bo Li, Ming Liu","doi":"10.1109/RADECS.2017.8696126","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696126","url":null,"abstract":"TID and SEE effects on 1 Mb HfO2-based RRAM with 1T1R structure are investigated. TID-induced leakage current causes ‘0-1’ type error bits. SELs in peripheral circuits occur, but no SEUs in memory array have been observed.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131629499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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