180nm CMOS嵌入式低差稳压器的单事件瞬态分析和硬化

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696118

Liang Wang, Xupeng Han, Yuanfu Zhao, Qiang Bian, S. Yue, Shijin Lu, Lei Shu, Jiaqi Liu, Tongde Li

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引用次数: 2

摘要

通过实验和仿真研究了180nm CMOS嵌入式LDO的SET灵敏度。观察了不同块击的不同输出响应，并给出了减轻每种影响的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Single-Event Transient Analysis and Hardening in a 180 nm CMOS Embedded Low-Dropout Regulator

SET sensitivity of a 180 nm CMOS embedded LDO is studied by experiments and simulations. Different output responses for different block striking are observed and methods to mitigate each influence are given.

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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