2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)最新文献

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The Difficulties and Solutions in SEE Radiation Experiments, Test Samples and Setup Preparation SEE辐射实验、测试样品和装置准备的困难和解决方法
A. Koziukov, V. Anashin, S. Yakovlev, A. Bychkov, Vadim A. Mazharov
{"title":"The Difficulties and Solutions in SEE Radiation Experiments, Test Samples and Setup Preparation","authors":"A. Koziukov, V. Anashin, S. Yakovlev, A. Bychkov, Vadim A. Mazharov","doi":"10.1109/RADECS.2017.8696208","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696208","url":null,"abstract":"This paper presents a collection of difficult technical issues and the experience obtained of solutions for SEE test process preparation regarding test samples identification and de-encapsulation procedures, test bench development and adjustment, testing software creation, irradiation process, test results processing and interpretation. All the considered practices have been worked out during the last two years and are currently used on a regular basis.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132600359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
TID in-situ measurement of temperature coefficient of various commercial voltage references 现场测量各种商业参考电压的温度系数
J. Hofman, R. Sharp, J. Haze
{"title":"TID in-situ measurement of temperature coefficient of various commercial voltage references","authors":"J. Hofman, R. Sharp, J. Haze","doi":"10.1109/RADECS.2017.8696249","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696249","url":null,"abstract":"this work presents results of a total ionising dose experiment, during which commercial voltage references were irradiated and measured under different bias conditions using an in-situ technique. The automated test system allowed the output voltage of the voltage references to be measured at various temperatures during irradiation to 100 krad(Si) and the subsequent 7 day period of annealing.The experimental results obtained allow improved insight into total ionising dose induced degradation of data acquisition systems for space applications. The results show that the temperature coefficient of selected commercial voltage references significantly changes (increases) with TID. Therefore these devices can be used for data acquisition systems only on board LEO missions like CubeSats, which are typically exposed to a limited radiation dose.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"8 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133238150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The structural changes of surfaces of solar cell protective coatings under combined electron-proton irradiation 电子-质子复合辐照下太阳电池防护涂层表面结构的变化
R. Khasanshin, L. Novikov
{"title":"The structural changes of surfaces of solar cell protective coatings under combined electron-proton irradiation","authors":"R. Khasanshin, L. Novikov","doi":"10.1109/RADECS.2017.8696241","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696241","url":null,"abstract":"Combined irradiation of glasses by 40-keV electrons and 20-keV protons was carried out in a vacuum chamber at pressure of 10–4 Pa; flux densities of electrons $varphi _{e}$ and protons $varphi _{p}$ were varied within $2times 10^{10}$ to $5times 10^{11}~cm^{-2}s^{-1}$. Structural changes of glass surfaces after irradiation were monitored by the Atomic Force Microscopy (AFM). Irradiation of samples was carried out with the use of stepwise increase of $varphi_{text{e}}$ and $varphi_{text{p}}$. Analysis of such samples allowed studying the creation and evolution of microscopic structures on their surfaces. It was found that nature of the structural changes is determined by $varphi_{text{e}}$ and $varphi_{text{p}}$ and their ratio.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132217719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Total Dose and Single-Event Effects Testing of the Intersil ISL70040SEH Gallium Nitride (GaN) FET Driver Intersil ISL70040SEH氮化镓场效应管驱动器的总剂量和单事件效应测试
N. V. Vonno, H. W. Satterfield, L. Pearce, F. Ballou, W. H. Newman, J. S. Gill, E. Thomson
{"title":"Total Dose and Single-Event Effects Testing of the Intersil ISL70040SEH Gallium Nitride (GaN) FET Driver","authors":"N. V. Vonno, H. W. Satterfield, L. Pearce, F. Ballou, W. H. Newman, J. S. Gill, E. Thomson","doi":"10.1109/RADECS.2017.8696139","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696139","url":null,"abstract":"We report the results of destructive and nondestructive single-event effects and total dose testing of the Intersil ISL70040SEH gallium nitride (GaN) FET driver, with a brief discussion of the part’s functionality, electrical specifications and fabrication process.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114367596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of an In-Air Heavy Ion Irradiation Facility at KVI-CART KVI-CART空气中重离子辐照装置的设计
B. N. Jones, M. V. Goethem, E. R. Graaf, S. Brandenburg
{"title":"Design of an In-Air Heavy Ion Irradiation Facility at KVI-CART","authors":"B. N. Jones, M. V. Goethem, E. R. Graaf, S. Brandenburg","doi":"10.1109/RADECS.2017.8696236","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696236","url":null,"abstract":"The specifications of a new heavy ion irradiation facility for masses up to xenon at 30 MeV/u in air at KVI-CART will be presented. The facility is planned to become operational in the beginning of 2018.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121229129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Architecture Choice for Radiation-Hard AlGaN/GaN HEMT Power Devices 抗辐射AlGaN/GaN HEMT功率器件的架构选择
D. Wellekens, S. Stoffels, A. Luu, M. Haussy, M. Melotte, D. Agten, S. Decoutere
{"title":"Architecture Choice for Radiation-Hard AlGaN/GaN HEMT Power Devices","authors":"D. Wellekens, S. Stoffels, A. Luu, M. Haussy, M. Melotte, D. Agten, S. Decoutere","doi":"10.1109/RADECS.2017.8696192","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696192","url":null,"abstract":"The robustness of GaN-on-Si AlGaN/GaN HEMT power devices against heavy ion and neutron irradiation is investigated. Two different HEMT architectures (pGaN and MISHEMT) are tested under identical irradiation conditions and compared against each other in order to define the optimum solution for radiation hard applications.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122525393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
SEE Test Guidelines and Characterisation of GaAs Power Devices GaAs功率器件的测试指南和特性
J. Cueto, J. Chuan, L. D. Pablo, C. Boatella, R. Marec, J. Muraro, A. Guillope, A. Rousset, G. Vignon
{"title":"SEE Test Guidelines and Characterisation of GaAs Power Devices","authors":"J. Cueto, J. Chuan, L. D. Pablo, C. Boatella, R. Marec, J. Muraro, A. Guillope, A. Rousset, G. Vignon","doi":"10.1109/RADECS.2017.8696129","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696129","url":null,"abstract":"Traditionally, GaAs devices were assumed to be relatively insensitive to the space radiation environment. This is indeed correct for TID effects. However, concerning single events effects, it has been shown that some GaAs power devices can be sensitive and may display destructive events depending on the technology used and the operating biasing conditions [RD-5], [RD-2].The paper aims at obtaining a better understanding of the relationship between failure in GaAs devices under heavy ion irradiation testing and the application conditions (DC+RF). An important part will be the identification of the critical parameters and the correlation between DC and DC+RF test conditions.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115920134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Validation of flux models to characterize the radiation environment in space based on current Rosetta-data 基于当前罗塞塔数据验证通量模型以表征空间辐射环境
V. Wyrwoll, Sascha Lüdeke, H. Evans, B. Poppe
{"title":"Validation of flux models to characterize the radiation environment in space based on current Rosetta-data","authors":"V. Wyrwoll, Sascha Lüdeke, H. Evans, B. Poppe","doi":"10.1109/RADECS.2017.8696188","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696188","url":null,"abstract":"With increasing interest in interplanetary manned space missions, the galactic cosmic radiation (GCR) background gains more and more relevance. Therefore, validating this radiation environment using existing flux models is of paramount importance. Hence a continuous development of these theoretical models is necessary. In this work, the flux model adopted by ISO 15390 is verified using Monte Carlo simulated response functions of the Standard Radiation Environment Monitor (SREM). Within the typical error estimates the principal count rate evolution of the SREM detector due to the GCR background could be consistently modelled with the proposed method.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116421431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
TCAD prediction of dose effects on MOSFETs with ECORCE 用ECORCE对mosfet剂量效应的TCAD预测
A. Michez, J. Boch, J. Dardié, F. Wrobel, A. Touboul, T. Maraine, F. Saigné, E. Lorfèvre, F. Bezerra
{"title":"TCAD prediction of dose effects on MOSFETs with ECORCE","authors":"A. Michez, J. Boch, J. Dardié, F. Wrobel, A. Touboul, T. Maraine, F. Saigné, E. Lorfèvre, F. Bezerra","doi":"10.1109/RADECS.2017.8696230","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696230","url":null,"abstract":"Response to Total Ionizing Dose of a component varies widely depending on applied bias, temperature and dose rate. Thus testing a component that will be used in radiative environment implies to experimentally check all the combinations of these parameters that will be encountered during the mission. To ease this operation, we propose to build a TCAD model from a reduce set of experiments, and then use this model to predict the behavior of components whatever the bias, the temperature, the total dose and the dose rate is, even if the value has not been tested experimentally.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123778510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Temperature dependence of the radiation degradation at high total dose levels 高总剂量水平下辐射降解的温度依赖性
V. Pershenkov, A. Bakerenkov, V. Telets, V. Belyakov, V. Shurenkov, V. Felitsyn, A. Rodin
{"title":"Temperature dependence of the radiation degradation at high total dose levels","authors":"V. Pershenkov, A. Bakerenkov, V. Telets, V. Belyakov, V. Shurenkov, V. Felitsyn, A. Rodin","doi":"10.1109/RADECS.2017.8696106","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696106","url":null,"abstract":"The physical model of the saturation of radiation-induced degradation in bipolar devices was proposed. The model can be used for hardness assurance applications for high total dose levels at different irradiation temperatures.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130541155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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