用ECORCE对mosfet剂量效应的TCAD预测

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696230

A. Michez, J. Boch, J. Dardié, F. Wrobel, A. Touboul, T. Maraine, F. Saigné, E. Lorfèvre, F. Bezerra

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引用次数: 1

摘要

组分对总电离剂量的反应因施加偏置、温度和剂量率的不同而变化很大。因此，对一个将在辐射环境中使用的部件进行测试意味着对任务期间将遇到的这些参数的所有组合进行实验检查。为了简化这一操作，我们建议从减少的实验集中建立一个TCAD模型，然后使用该模型来预测组分的行为，无论偏置、温度、总剂量和剂量率是多少，即使没有经过实验测试。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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TCAD prediction of dose effects on MOSFETs with ECORCE

Response to Total Ionizing Dose of a component varies widely depending on applied bias, temperature and dose rate. Thus testing a component that will be used in radiative environment implies to experimentally check all the combinations of these parameters that will be encountered during the mission. To ease this operation, we propose to build a TCAD model from a reduce set of experiments, and then use this model to predict the behavior of components whatever the bias, the temperature, the total dose and the dose rate is, even if the value has not been tested experimentally.

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2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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