2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)最新文献

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Simulation and Experiment in Neutron Induced Single Event Effects in SRAM SRAM中中子诱导单事件效应的模拟与实验
Xiaoming Jin, Chenhui Wang, Xiaoqiang Guo, Chao Qi, Shanchao Yang, Yan Liu, Wei Chen, S. Gerardin, M. Bagatin, S. Bonaldo, A. Paccagnella
{"title":"Simulation and Experiment in Neutron Induced Single Event Effects in SRAM","authors":"Xiaoming Jin, Chenhui Wang, Xiaoqiang Guo, Chao Qi, Shanchao Yang, Yan Liu, Wei Chen, S. Gerardin, M. Bagatin, S. Bonaldo, A. Paccagnella","doi":"10.1109/RADECS.2017.8696259","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696259","url":null,"abstract":"Neutron-induced single event effect is one of the significant factors affecting the reliability of memories. We applied Geant4 to establish a simulation model for neutron-induced single event upset (SED) in SRAM cell. The simulation results can quantitatively describe the SEU cross section evolution with the technology nodes and neutron energy. The results of neutron radiation experiments on SRAMs with different technology nodes are consistent with the simulation results. Moreover, we investigated the relationship of linear energy transfer (LET) and range of neutron-induced secondary particles with their energy and atomic number.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124834669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Proton Radiation Effects on Hamamatsu InGaAs PIN Photodiodes 质子辐射对滨松InGaAs PIN光电二极管的影响
Raichelle J. Aniceto, R. Milanowski, Slaven Moro, K. Cahoy, G. Schlenvogt
{"title":"Proton Radiation Effects on Hamamatsu InGaAs PIN Photodiodes","authors":"Raichelle J. Aniceto, R. Milanowski, Slaven Moro, K. Cahoy, G. Schlenvogt","doi":"10.1109/RADECS.2017.8696239","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696239","url":null,"abstract":"Hamamatsu InGaAs PIN photodiodes were exposed to 105 MeV protons to a fluence of $2.55 times 10^{11}$ p/cm2. Radiation induced increase in dark current was observed that appeared stable following room temperature annealing. A preliminary TCAD model was developed for use in mixed-mode simulation analyses","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"54 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124860589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
SEE Testing on PADI-X for JUICE 8-Channel Ultrafast Charge Pre-Amplifier ASIC JUICE 8通道超快充电前置放大器ASIC的pai - x SEE测试
I. Lopez-Calle, A. Sirin, H. Andersson, M. Kerényi, J. Gonzalez, C. Poivey, L. Bonora, E. Muñoz, M. Domínguez, G. Fernández
{"title":"SEE Testing on PADI-X for JUICE 8-Channel Ultrafast Charge Pre-Amplifier ASIC","authors":"I. Lopez-Calle, A. Sirin, H. Andersson, M. Kerényi, J. Gonzalez, C. Poivey, L. Bonora, E. Muñoz, M. Domínguez, G. Fernández","doi":"10.1109/RADECS.2017.8696133","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696133","url":null,"abstract":"SEE testing carried out on PADI-X charge amplifier ASIC within ESA-JUICE mission context. Not SEL or permanent damage was detected. Full SEFI/CEM cross sections are provided with an ion LET range of 1-63 MeV.cm2/mg.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122076940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Impact of the Trapped Proton Anisotropy on the Ionizing Dose at Low Earth Orbits 俘获质子各向异性对近地轨道电离剂量的影响
A. Varotsou, P. Pourrouquet, Romain Fonta, D. Boscher, R. Ecoffet
{"title":"Impact of the Trapped Proton Anisotropy on the Ionizing Dose at Low Earth Orbits","authors":"A. Varotsou, P. Pourrouquet, Romain Fonta, D. Boscher, R. Ecoffet","doi":"10.1109/RADECS.2017.8696148","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696148","url":null,"abstract":"The trapped proton anisotropy is not commonly taken into account in the radiation hardness assurance process for Low Earth Orbit missions. In this study, the impact of considering this characteristic of the trapped proton population is evaluated for the TID, Total Ionizing Dose, risk assessment at electronic component level. A specific development has been made in the OMERE tool and the realistic 3-dimensional radiation model of the SAC-D satellite (660 km, $98^{mathrm {o}}$) has been used to take into account the shielding around the components. It is shown that considering the proton anisotropy has no important impact on the TID result.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115551487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Radiation Performance of Intersil’s Commercial Space Plastic Parts Intersil商用航天塑料件的辐射性能研究
W. H. Newman, N. V. van Vonno, S. K. Bernard, L. Pearce, J. Broline, O. Mansilla, E. Thomson
{"title":"The Radiation Performance of Intersil’s Commercial Space Plastic Parts","authors":"W. H. Newman, N. V. van Vonno, S. K. Bernard, L. Pearce, J. Broline, O. Mansilla, E. Thomson","doi":"10.1109/RADECS.2017.8696122","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696122","url":null,"abstract":"In response to the commercial space industry’s need for low-cost, highly-reliable, radiation-tolerant parts, Intersil has combined its automotive quality knowledge with its radiation-hardened legacy to develop a line of space-grade parts in plastic packages.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128491199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation on the Sensitivity Degradation of Dosimeters based on Floating Gate Structure 基于浮栅结构的剂量计灵敏度退化研究
M. Brucoli, S. Danzeca, J. Cesari, M. Brugger, A. Masi, S. Gilardoni, Á. Pineda, L. Dusseau, F. Wrobel
{"title":"Investigation on the Sensitivity Degradation of Dosimeters based on Floating Gate Structure","authors":"M. Brucoli, S. Danzeca, J. Cesari, M. Brugger, A. Masi, S. Gilardoni, Á. Pineda, L. Dusseau, F. Wrobel","doi":"10.1109/RADECS.2017.8696191","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696191","url":null,"abstract":"Dosimeters based on floating gate structure exhibit a linear radiation response, whose sensitivity is required to be highly stable in order to achieve an accurate dose measurement. The understanding of the mechanisms behind the sensitivity degradation is, therefore, a fundamental task in order to improve the design of these devices. In this work, the causes of the loss of sensitivity are analyzed. The role of the injection rate and the reading MOS on are discussed in detail, by analyzing the results of radiation experiments specifically performed. The study sheds light on the importance of the choice of the amplitude of the linear range and the indirect effect of high dose rates. In addition, the TID lifetime of the core floating gate sensor is pointed out.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125774395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells 温度对陶氧基记忆比特细胞总电离剂量响应的影响
M. Mclain, J. Mcdonald, H. Hjalmarson, J. Serrano, Roy P. Cuoco, Don Hanson, D. Hughart, M. Marinella, E. F. Hartman
{"title":"Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells","authors":"M. Mclain, J. Mcdonald, H. Hjalmarson, J. Serrano, Roy P. Cuoco, Don Hanson, D. Hughart, M. Marinella, E. F. Hartman","doi":"10.1109/RADECS.2017.8696164","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696164","url":null,"abstract":"The effects of temperature on the total ionizing dose (TID) response of tantalum oxide (TaOx) memristive bit cells are investigated. The TaOx devices were manufactured by Sandia National Laboratories (SNL). In-situ data were obtained as a function of temperature, accumulated dose, and bias at the Gamma Irradiation Facility (GIF). The data indicate that devices reset into the high resistance off-state exhibit decreases in resistance when the temperature is increased. However, an increased susceptibility to TID at elevated temperatures was not observed.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126844792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
UCL irradiation facilities status 伦敦大学学院辐照设施状况
L. Standaert, N. Postiau, M. Loiselet
{"title":"UCL irradiation facilities status","authors":"L. Standaert, N. Postiau, M. Loiselet","doi":"10.1109/RADECS.2017.8696227","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696227","url":null,"abstract":"This paper reports the last developments and the status of the UCL irradiation facilities for radiation hardness assurance. Protons up to 62MeV, heavy ions up to Xenon, neutrons and Co-60 are available.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126408051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Alpha radiation testing of materials: a technique with excellent dosimetry and no radioactive contamination 材料的α辐射测试:一种具有优良剂量学和无放射性污染的技术
R. Sharp
{"title":"Alpha radiation testing of materials: a technique with excellent dosimetry and no radioactive contamination","authors":"R. Sharp","doi":"10.1109/RADECS.2017.8696232","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696232","url":null,"abstract":"This abstract describes a technique by which to carry out the alpha radiation testing of materials samples without the use of radioactive materials. This technique avoids the chance of creating radioactively contaminated test samples, which is a drawback of the most common processes for assessing alpha radiation effects. A beam of alpha particles produced by an accelerator is brought to bear upon the test samples, exposing them to alpha radiation in a controlled and measureable manner. This has a secondary benefit of significantly improving the accuracy of dosimetry compared with other techniques.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128368561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SEL and cell failures in MRAM under ion and focused laser irradiation 离子和聚焦激光照射下MRAM的SEL和细胞失效
A. Pechenkin, A. Boruzdina, A. Yanenko, D. E. Protasov, I. Shvetsov-Shilovskiy, A. Sangalov
{"title":"SEL and cell failures in MRAM under ion and focused laser irradiation","authors":"A. Pechenkin, A. Boruzdina, A. Yanenko, D. E. Protasov, I. Shvetsov-Shilovskiy, A. Sangalov","doi":"10.1109/RADECS.2017.8696211","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696211","url":null,"abstract":"MRAM cell permanent failures was observed along with SEL under laser and ion beam irradiation. Sample preparation for back side was proposed to safe MRAM functionality and to allow focused laser irradiation though the substrate of MRAM die.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114790182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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