温度对陶氧基记忆比特细胞总电离剂量响应的影响

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696164

M. Mclain, J. Mcdonald, H. Hjalmarson, J. Serrano, Roy P. Cuoco, Don Hanson, D. Hughart, M. Marinella, E. F. Hartman

{"title":"温度对陶氧基记忆比特细胞总电离剂量响应的影响","authors":"M. Mclain, J. Mcdonald, H. Hjalmarson, J. Serrano, Roy P. Cuoco, Don Hanson, D. Hughart, M. Marinella, E. F. Hartman","doi":"10.1109/RADECS.2017.8696164","DOIUrl":null,"url":null,"abstract":"The effects of temperature on the total ionizing dose (TID) response of tantalum oxide (TaOx) memristive bit cells are investigated. The TaOx devices were manufactured by Sandia National Laboratories (SNL). In-situ data were obtained as a function of temperature, accumulated dose, and bias at the Gamma Irradiation Facility (GIF). The data indicate that devices reset into the high resistance off-state exhibit decreases in resistance when the temperature is increased. However, an increased susceptibility to TID at elevated temperatures was not observed.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells\",\"authors\":\"M. Mclain, J. Mcdonald, H. Hjalmarson, J. Serrano, Roy P. Cuoco, Don Hanson, D. Hughart, M. Marinella, E. F. Hartman\",\"doi\":\"10.1109/RADECS.2017.8696164\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of temperature on the total ionizing dose (TID) response of tantalum oxide (TaOx) memristive bit cells are investigated. The TaOx devices were manufactured by Sandia National Laboratories (SNL). In-situ data were obtained as a function of temperature, accumulated dose, and bias at the Gamma Irradiation Facility (GIF). The data indicate that devices reset into the high resistance off-state exhibit decreases in resistance when the temperature is increased. However, an increased susceptibility to TID at elevated temperatures was not observed.\",\"PeriodicalId\":223580,\"journal\":{\"name\":\"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.2017.8696164\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.2017.8696164","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了温度对氧化钽(TaOx)忆阻比特电池总电离剂量(TID)响应的影响。TaOx装置由桑迪亚国家实验室(SNL)制造。现场数据作为温度、累积剂量和伽马辐照设施(GIF)偏差的函数获得。数据表明，当温度升高时，复位到高阻关断状态的器件电阻下降。然而，没有观察到高温下对TID的易感性增加。

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Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells

The effects of temperature on the total ionizing dose (TID) response of tantalum oxide (TaOx) memristive bit cells are investigated. The TaOx devices were manufactured by Sandia National Laboratories (SNL). In-situ data were obtained as a function of temperature, accumulated dose, and bias at the Gamma Irradiation Facility (GIF). The data indicate that devices reset into the high resistance off-state exhibit decreases in resistance when the temperature is increased. However, an increased susceptibility to TID at elevated temperatures was not observed.

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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