质子辐射对滨松InGaAs PIN光电二极管的影响

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696239

Raichelle J. Aniceto, R. Milanowski, Slaven Moro, K. Cahoy, G. Schlenvogt

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引用次数: 3

摘要

Hamamatsu InGaAs PIN光电二极管暴露在105 MeV的质子中，影响为2.55 \乘以10^{11}$ p/cm2。在室温退火后，观察到辐射引起的暗电流增加趋于稳定。建立了用于混合模式仿真分析的初步TCAD模型

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Proton Radiation Effects on Hamamatsu InGaAs PIN Photodiodes

Hamamatsu InGaAs PIN photodiodes were exposed to 105 MeV protons to a fluence of $2.55 \times 10^{11}$ p/cm2. Radiation induced increase in dark current was observed that appeared stable following room temperature annealing. A preliminary TCAD model was developed for use in mixed-mode simulation analyses

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2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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