Proton Radiation Effects on Hamamatsu InGaAs PIN Photodiodes

Abstract

Hamamatsu InGaAs PIN photodiodes were exposed to 105 MeV protons to a fluence of $2.55 \times 10^{11}$ p/cm2. Radiation induced increase in dark current was observed that appeared stable following room temperature annealing. A preliminary TCAD model was developed for use in mixed-mode simulation analyses