SRAM中中子诱导单事件效应的模拟与实验

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696259

Xiaoming Jin, Chenhui Wang, Xiaoqiang Guo, Chao Qi, Shanchao Yang, Yan Liu, Wei Chen, S. Gerardin, M. Bagatin, S. Bonaldo, A. Paccagnella

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引用次数: 0

摘要

中子诱发的单事件效应是影响记忆可靠性的重要因素之一。我们利用Geant4建立了SRAM细胞中中子诱导单事件扰动(SED)的模拟模型。模拟结果可以定量地描述原子束截面随技术节点和中子能量的演变。不同技术节点的sram中子辐射实验结果与仿真结果一致。此外，我们还研究了中子诱导二次粒子的线性能量传递(LET)和范围与其能量和原子序数的关系。

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Simulation and Experiment in Neutron Induced Single Event Effects in SRAM

Neutron-induced single event effect is one of the significant factors affecting the reliability of memories. We applied Geant4 to establish a simulation model for neutron-induced single event upset (SED) in SRAM cell. The simulation results can quantitatively describe the SEU cross section evolution with the technology nodes and neutron energy. The results of neutron radiation experiments on SRAMs with different technology nodes are consistent with the simulation results. Moreover, we investigated the relationship of linear energy transfer (LET) and range of neutron-induced secondary particles with their energy and atomic number.

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2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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