Intersil ISL70040SEH氮化镓场效应管驱动器的总剂量和单事件效应测试

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696139

N. V. Vonno, H. W. Satterfield, L. Pearce, F. Ballou, W. H. Newman, J. S. Gill, E. Thomson

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引用次数: 1

摘要

我们报告了Intersil ISL70040SEH氮化镓(GaN) FET驱动器的破坏性和非破坏性单事件效应和总剂量测试结果，并简要讨论了该部件的功能，电气规格和制造工艺。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Total Dose and Single-Event Effects Testing of the Intersil ISL70040SEH Gallium Nitride (GaN) FET Driver

We report the results of destructive and nondestructive single-event effects and total dose testing of the Intersil ISL70040SEH gallium nitride (GaN) FET driver, with a brief discussion of the part’s functionality, electrical specifications and fabrication process.

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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