抗辐射AlGaN/GaN HEMT功率器件的架构选择

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696192

D. Wellekens, S. Stoffels, A. Luu, M. Haussy, M. Melotte, D. Agten, S. Decoutere

{"title":"抗辐射AlGaN/GaN HEMT功率器件的架构选择","authors":"D. Wellekens, S. Stoffels, A. Luu, M. Haussy, M. Melotte, D. Agten, S. Decoutere","doi":"10.1109/RADECS.2017.8696192","DOIUrl":null,"url":null,"abstract":"The robustness of GaN-on-Si AlGaN/GaN HEMT power devices against heavy ion and neutron irradiation is investigated. Two different HEMT architectures (pGaN and MISHEMT) are tested under identical irradiation conditions and compared against each other in order to define the optimum solution for radiation hard applications.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Architecture Choice for Radiation-Hard AlGaN/GaN HEMT Power Devices\",\"authors\":\"D. Wellekens, S. Stoffels, A. Luu, M. Haussy, M. Melotte, D. Agten, S. Decoutere\",\"doi\":\"10.1109/RADECS.2017.8696192\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The robustness of GaN-on-Si AlGaN/GaN HEMT power devices against heavy ion and neutron irradiation is investigated. Two different HEMT architectures (pGaN and MISHEMT) are tested under identical irradiation conditions and compared against each other in order to define the optimum solution for radiation hard applications.\",\"PeriodicalId\":223580,\"journal\":{\"name\":\"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.2017.8696192\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.2017.8696192","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

研究了GaN-on- si AlGaN/GaN HEMT功率器件对重离子和中子辐照的鲁棒性。两种不同的HEMT架构(pGaN和MISHEMT)在相同的辐照条件下进行了测试，并相互比较，以确定辐射硬应用的最佳解决方案。

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Architecture Choice for Radiation-Hard AlGaN/GaN HEMT Power Devices

The robustness of GaN-on-Si AlGaN/GaN HEMT power devices against heavy ion and neutron irradiation is investigated. Two different HEMT architectures (pGaN and MISHEMT) are tested under identical irradiation conditions and compared against each other in order to define the optimum solution for radiation hard applications.

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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