Temperature dependence of the radiation degradation at high total dose levels

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696106

V. Pershenkov, A. Bakerenkov, V. Telets, V. Belyakov, V. Shurenkov, V. Felitsyn, A. Rodin

引用次数: 1

Abstract

The physical model of the saturation of radiation-induced degradation in bipolar devices was proposed. The model can be used for hardness assurance applications for high total dose levels at different irradiation temperatures.

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高总剂量水平下辐射降解的温度依赖性

提出了双极器件辐射诱导降解饱和的物理模型。该模型可用于不同辐照温度下高总剂量水平的硬度保证应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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