Radiation Effects on 1 Mb HfO2-based Resistive Memory

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696126

J. Bi, Feng Zhang, Li Chen, Yuan Duan, K. Xi, Bo Li, Ming Liu

引用次数: 0

Abstract

TID and SEE effects on 1 Mb HfO2-based RRAM with 1T1R structure are investigated. TID-induced leakage current causes ‘0-1’ type error bits. SELs in peripheral circuits occur, but no SEUs in memory array have been observed.

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辐射对1mb hfo2基电阻式存储器的影响

研究了TID和SEE对1T1R结构的1mb hfo2基RRAM的影响。tid感应泄漏电流导致' 0-1 '型错误位。外围电路中有sel，但存储阵列中没有seu。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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