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2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)最新文献

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Ionizing Radiation Response of the 4530 Parallel-to- Serial Driver and 4527 Registered Receiver 4530并行串行驱动和4527注册接收机的电离辐射响应
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696130
S. C. Witczak, Eric V. Williamson, Matthew J. Calderone, David L. Jarvis, K. E. Marino, Glen E. Macejik
{"title":"Ionizing Radiation Response of the 4530 Parallel-to- Serial Driver and 4527 Registered Receiver","authors":"S. C. Witczak, Eric V. Williamson, Matthew J. Calderone, David L. Jarvis, K. E. Marino, Glen E. Macejik","doi":"10.1109/RADECS.2017.8696130","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696130","url":null,"abstract":"The Northrop Grumman 4530 Parallel-to-Serial Driver and 4527 Registered Receiver align and convert 12-bit parallel data to single-ended serial streams. The devices were evaluated for functionality and shifts in logic levels, operating voltages, input currents, timing and power dissipation following exposure to moderate doses of ionizing radiation and post-irradiation anneal. Neither irradiation nor post-irradiation anneal has a measureable effect on the performance parameters. The radiation hardness of the devices is attributed in part to a pimplant in the field regions.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130535612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Compendium of Recent SEE, and TID Test Results conducted by CNES from 2011-2016 CNES 2011-2016年近期SEE和TID测试结果汇编
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696134
Roberta Pilia, F. Malou, D. Dangla, F. Bezerra, D. Standarovski, R. Ecoffet, P. Tastet
{"title":"Compendium of Recent SEE, and TID Test Results conducted by CNES from 2011-2016","authors":"Roberta Pilia, F. Malou, D. Dangla, F. Bezerra, D. Standarovski, R. Ecoffet, P. Tastet","doi":"10.1109/RADECS.2017.8696134","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696134","url":null,"abstract":"This paper reports the results and analysis of various total ionizing dose (TID) and single event effects (SEE) tests. The compendium covers devices tested by CNES from 2011 to 2016. The DUTs employed for the study include memories, microprocessors, logic families, converters, linear switches, linear amplifiers and others.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131952281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bayesian Modeling of COTS Power MOSFET Ionizing Dose Impact on Circuit Response COTS功率MOSFET电离剂量对电路响应影响的贝叶斯建模
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696104
A. Witulski, M. B. Smith, N. Mahadevan, A. Sternberg, C. Barnes, D. Sheldon, peixiong zhao, G. Karsai, M. Mccurdy
{"title":"Bayesian Modeling of COTS Power MOSFET Ionizing Dose Impact on Circuit Response","authors":"A. Witulski, M. B. Smith, N. Mahadevan, A. Sternberg, C. Barnes, D. Sheldon, peixiong zhao, G. Karsai, M. Mccurdy","doi":"10.1109/RADECS.2017.8696104","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696104","url":null,"abstract":"Threshold voltage variation with ionizing dose was measured for a commercial power MOSFET. Variation of radiation response was captured using a Bayesian linear model, which enabled a Monte Carlo simulation of variation in circuit performance.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132082019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Radiation Testing of an SAR ADC for Use in Quench Detection Systems for the HiLumi LHC 用于HiLumi大型强子对撞机猝灭检测系统的SAR ADC辐射测试
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696225
J. Spasić, R. Denz, J. Kopal, J. Steckert
{"title":"Radiation Testing of an SAR ADC for Use in Quench Detection Systems for the HiLumi LHC","authors":"J. Spasić, R. Denz, J. Kopal, J. Steckert","doi":"10.1109/RADECS.2017.8696225","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696225","url":null,"abstract":"This work presents a radiation assessment of a successive-approximation-register (SAR) analog-to-digital converter (ADC) for purposes of a new generation of quench detection systems (QDS) that will be used in the radiation environment of High-Luminosity Large Hadron Collider (HLLHC). The assessment has been performed by conducting an irradiation testing campaign using a proton beam with radiation doses up to 1 kGy. The test results render the selected ADC highly robust for use in future applications of quench protection in the LHC superconducting magnet circuits.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128020639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Complex environmental and synergetic effects on space materials: lesson learned from THERME in-flight data 对空间材料的复杂环境和协同影响:从THERME飞行数据中吸取的教训
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696245
É. Vanhove, S. Duzellier, D. Faye, S. Remaury
{"title":"Complex environmental and synergetic effects on space materials: lesson learned from THERME in-flight data","authors":"É. Vanhove, S. Duzellier, D. Faye, S. Remaury","doi":"10.1109/RADECS.2017.8696245","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696245","url":null,"abstract":"Surface materials in spacecraft are exposed to complex environment. Various effects i.e., contamination, ageing and erosion are at play and synergy induces severe degradation of performance. The THERME experiment investigates these mechanisms in EEO orbit on a large set of samples.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126734534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Single Event Effects And Total Dose Testing Of Digital To Analog Converters 数模转换器的单事件效应和总剂量测试
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696263
A. Karakozov, P.V. Nekraso, D. Bobrovsky, G. Sorokoumov, V. Telets
{"title":"Single Event Effects And Total Dose Testing Of Digital To Analog Converters","authors":"A. Karakozov, P.V. Nekraso, D. Bobrovsky, G. Sorokoumov, V. Telets","doi":"10.1109/RADECS.2017.8696263","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696263","url":null,"abstract":"In the article we introduce histogram method for digital to analog converters’ space radiation testing including both total dose and single event effects. We present new total dose and single event (SEL, SEU and SET) data of three DAC chips, as well as test setup and measurement system structure.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133030439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
MOSFETs SEB & SEGR Qualification Results with SOA Estimation mosfet SEB和SEGR鉴定结果与SOA估计
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696132
Sergey A. Iakovlev, V. Anashin, P. Chubunov, A. Koziukov, Kais B. Bu-Khasan, T. A. Maksimenko, A. M. Chlenov
{"title":"MOSFETs SEB & SEGR Qualification Results with SOA Estimation","authors":"Sergey A. Iakovlev, V. Anashin, P. Chubunov, A. Koziukov, Kais B. Bu-Khasan, T. A. Maksimenko, A. M. Chlenov","doi":"10.1109/RADECS.2017.8696132","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696132","url":null,"abstract":"the paper presents single event effects (SEE) test results for some commercial power MOSFETs obtained at Roscosmos SEE Test Facilities during test campaign in October 2016.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115765011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low Level Radiation and Fault Protection Techniques Suitable for Nanosatellite Missions 适用于纳米卫星任务的低水平辐射和故障保护技术
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696240
David Selčan, Gregor Kirbiš, I. Kramberger
{"title":"Low Level Radiation and Fault Protection Techniques Suitable for Nanosatellite Missions","authors":"David Selčan, Gregor Kirbiš, I. Kramberger","doi":"10.1109/RADECS.2017.8696240","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696240","url":null,"abstract":"This paper presents radiation and fault protection techniques for nanosatellites, which are based on the use of flash-based FPGAs, hierarchical Latching Current Limiters, two types of Watchdog Timers, Error Correction Coding and Triple Modular Redundancy.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"190 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114064106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modelling voltage dependence of photocurrent in proton irradiated GaAs cells 质子辐照砷化镓电池中光电流电压依赖性的建模
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696205
Manuel Salzberger, M. Rutzinger, C. Nömayr, P. Lugli, C. Zimmermann
{"title":"Modelling voltage dependence of photocurrent in proton irradiated GaAs cells","authors":"Manuel Salzberger, M. Rutzinger, C. Nömayr, P. Lugli, C. Zimmermann","doi":"10.1109/RADECS.2017.8696205","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696205","url":null,"abstract":"GaAs single junction cells were irradiated with high doses of protons and current-voltage characteristics were obtained under AM0 illumination. A discrepancy between the measured photocurrent and the typically constant photocurrent of a solar cell was determined. The measured photocurrent showed a voltage dependence. We attribute the voltage dependence of the photocurrent to a combination of low diffusion length and the voltage dependence of the width of the space charge region. A model is developed which predicts the photocurrent of the cells correctly.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129803005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Total dose radiation hardening of MOS transistors by fluorine implantation 氟注入MOS晶体管的总剂量辐射硬化
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI: 10.1109/RADECS.2017.8696125
Chris Shaw, Kenneth Potter, K. Morgan, P. Ashburn, K. de Groot, B. Redman-White
{"title":"Total dose radiation hardening of MOS transistors by fluorine implantation","authors":"Chris Shaw, Kenneth Potter, K. Morgan, P. Ashburn, K. de Groot, B. Redman-White","doi":"10.1109/RADECS.2017.8696125","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696125","url":null,"abstract":"Total ionizing dose effects are predominantly due to hole traps at the Si/SiO2 interface at the shallow trench isolation (STI) and buried oxide. Here we show that Fluorine ion implantation is capable to fully passivate those traps such that negligible threshold shift is discernible in NMOS transistors radiated up to a maximum dose of 1MRad (Si). H-gate transistor were designed and fabricated using thin gate oxide, source drain pull back and ion implanted Fluorine to address radiation effects in the gate oxide, STI and buried oxides respectively. The transistors hardness was tested using gamma radiation from a Co60 source. Transistors without fluorine show a threshold voltage shifts of up to 350mV. Fluorine doped transistors show negligible threshold shifts up to the maximum dose.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122628727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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