CNES 2011-2016年近期SEE和TID测试结果汇编

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696134

Roberta Pilia, F. Malou, D. Dangla, F. Bezerra, D. Standarovski, R. Ecoffet, P. Tastet

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摘要

本文报道了各种总电离剂量(TID)和单事件效应(SEE)试验的结果和分析。该纲要涵盖了2011年至2016年CNES测试的设备。用于研究的dut包括存储器、微处理器、逻辑系列、转换器、线性开关、线性放大器等。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Compendium of Recent SEE, and TID Test Results conducted by CNES from 2011-2016

This paper reports the results and analysis of various total ionizing dose (TID) and single event effects (SEE) tests. The compendium covers devices tested by CNES from 2011 to 2016. The DUTs employed for the study include memories, microprocessors, logic families, converters, linear switches, linear amplifiers and others.

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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