COTS功率MOSFET电离剂量对电路响应影响的贝叶斯建模

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696104

A. Witulski, M. B. Smith, N. Mahadevan, A. Sternberg, C. Barnes, D. Sheldon, peixiong zhao, G. Karsai, M. Mccurdy

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引用次数: 3

摘要

测量了商用功率MOSFET的阈值电压随电离剂量的变化。使用贝叶斯线性模型捕获辐射响应的变化，这使得电路性能变化的蒙特卡罗模拟成为可能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Bayesian Modeling of COTS Power MOSFET Ionizing Dose Impact on Circuit Response

Threshold voltage variation with ionizing dose was measured for a commercial power MOSFET. Variation of radiation response was captured using a Bayesian linear model, which enabled a Monte Carlo simulation of variation in circuit performance.

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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