2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)最新文献

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Single event latchup in ICs with integrated latchup protection technology 集成闭锁保护技术的集成电路单事件闭锁
D.S. Kostyuchenko, A. Karakozov, P. V. Nekrasov, A.A. Pechenkin D.V.Savchenkov, A. Nikiforov
{"title":"Single event latchup in ICs with integrated latchup protection technology","authors":"D.S. Kostyuchenko, A. Karakozov, P. V. Nekrasov, A.A. Pechenkin D.V.Savchenkov, A. Nikiforov","doi":"10.1109/RADECS.2017.8696207","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696207","url":null,"abstract":"Test method is described and obtained results presented for ADC 7809ALP with internal latchup protection system.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128315209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Estimation of System Survival Reliability in a Radiation Environment Based on the Available Radiation Data at Component Level 基于组件级辐射数据的辐射环境下系统生存可靠性估计
R. Ferraro, S. Danzeca, L. Dilillo, M. Brugger, A. Masi, S. Gilardoni
{"title":"Estimation of System Survival Reliability in a Radiation Environment Based on the Available Radiation Data at Component Level","authors":"R. Ferraro, S. Danzeca, L. Dilillo, M. Brugger, A. Masi, S. Gilardoni","doi":"10.1109/RADECS.2017.8696202","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696202","url":null,"abstract":"The need to qualify systems for high radiation levels for accelerator or space environment has led to the development of a new approach based on reliability concepts. Conventional qualification approaches provide conservative radiation designs without the ability to estimate the system survival reliabilities beyond the required radiation hardness. In this work, an approach is described to estimate system survival reliabilities against radiation-induced failures based on component radiation response. For this purpose, models and methods are proposed to estimate the single component survival reliability against the different kinds of radiation-induced failures. A feasibility study of the use of such an approach for qualification purpose is presented with a demonstration of survival reliability estimation of a case-study system.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128357927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Impact of the Detector Definition on the Reverse Monte Carlo Calculation Results 探测器定义对反向蒙特卡罗计算结果的影响
P. Pourrouquet, Vincent Traisnel, A. Varotsou, G. Rolland, R. Ecoffet
{"title":"Impact of the Detector Definition on the Reverse Monte Carlo Calculation Results","authors":"P. Pourrouquet, Vincent Traisnel, A. Varotsou, G. Rolland, R. Ecoffet","doi":"10.1109/RADECS.2017.8696119","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696119","url":null,"abstract":"Most of the TID, Total Ionizing Dose, calculations for electronic devices based on Reverse Monte Carlo methods consider a point as the detector. This assumption is made whereas the area sensitive to TID is a volume. However, the shape and size of this volume is difficult to estimate. A parametric study using FASTRAD® has been performed to compare TID results obtained using different detector shapes and sizes, to values computed using point detectors. Multiple geometrical models from the simplest one to the most realistic one allowed to get a large spectrum of data and perform a thorough analysis. An equivalent study was performed for external materials and its results are also shown. Recommendations on detector choice are given at the end of this paper.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115054838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors 耗尽单片有源像素传感器CMOS工艺的辐射硬度研究
E. J. Schioppa, R. Bates, C. Buttar, M. Dalla, J. van Hoorne, T. Kugathasan, D. Maneuski, C. A. M. Tobon, L. Musa, H. Pernegger, P. Riedler, C. Riegel, C. Sbarra, D. Schaefer, Abhishek Sharma, W. Snoeys, C. S. Sánchez
{"title":"Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors","authors":"E. J. Schioppa, R. Bates, C. Buttar, M. Dalla, J. van Hoorne, T. Kugathasan, D. Maneuski, C. A. M. Tobon, L. Musa, H. Pernegger, P. Riedler, C. Riegel, C. Sbarra, D. Schaefer, Abhishek Sharma, W. Snoeys, C. S. Sánchez","doi":"10.1109/RADECS.2017.8696182","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696182","url":null,"abstract":"Monolithic CMOS sensors are being proposed for the upgrade of the ATLAS inner tracker. Sensors fabricated in a new TowerJazz 180nm process, feature full depletion of the sensitive layer and radiation tolerance up to 10<sup>15</sup>n<inf>eq</inf>/cm<sup>2</sup>.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130699704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
CELESTA Demonstrator Radiation Characterization in a LEO Representative Environment at CHARM. CELESTA演示器在LEO代表环境中的辐射特性。
A. Merlenghi, M. Brugger, E. Chesta, S. Danzeca, R. G. Alía, A. Masi, P. Peronnard, R. Secondo, M. Bernard, L. Dusseau, X. Laurand, J. Vaillé
{"title":"CELESTA Demonstrator Radiation Characterization in a LEO Representative Environment at CHARM.","authors":"A. Merlenghi, M. Brugger, E. Chesta, S. Danzeca, R. G. Alía, A. Masi, P. Peronnard, R. Secondo, M. Bernard, L. Dusseau, X. Laurand, J. Vaillé","doi":"10.1109/RADECS.2017.8696243","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696243","url":null,"abstract":"The qualification process of CubeSat systems under radiation is long and requires tests at several facilities. An alternative qualification methodology is being studied at the CHARM facility with the CELESTA radiation module demonstrator.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"305 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131061441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Hardening application programs by the operating system on COTS processors: what protection to SED can be expected and at what performance cost 通过操作系统在COTS处理器上加固应用程序:可以期望对SED提供什么样的保护,以什么样的性能代价
E. Assogba, Marc Lobelle
{"title":"Hardening application programs by the operating system on COTS processors: what protection to SED can be expected and at what performance cost","authors":"E. Assogba, Marc Lobelle","doi":"10.1109/RADECS.2017.8696266","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696266","url":null,"abstract":"This paper presents how an operating system can protect its users applications against SEU effects. The overhead is 250% for pure computation programs. The operating system protects short processing elements of at most a few hundreds of $mu $ sec. These are short enough to assume that at most 1 SEU must be taken into account according to a statistical analysis of SEU occurrence. If the single SEU hypothesis is satisfied, all SEU caused errors are corrected. This was confirmed by extensive simulation tests.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134214411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New Setup for SEE Measurements in South America 南美SEE测量的新设置
Y. Aguiar, N. Medina, N. Added, E. Macchione, S. G. Nascimento, A. R. Leite, M. Silveira
{"title":"New Setup for SEE Measurements in South America","authors":"Y. Aguiar, N. Medina, N. Added, E. Macchione, S. G. Nascimento, A. R. Leite, M. Silveira","doi":"10.1109/RADECS.2017.8696206","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696206","url":null,"abstract":"The new setup for Single Event Effects studies at LAFN-USP, Brazil is described in this work. The new beam line is dedicated to production of large area, high uniformity and low intensity heavy-ions beams to irradiate electronic devices. Its design relies on defocusing and multiple scattering techniques to obtain desired beam characteristics. Beam uniformity measured was better than 90%.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129744184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Approach to Estimation of Modern IC’s Sustainability After Series of Single Events 一系列单一事件后现代集成电路可持续性评估方法
G. Davydov, P. Skorobogatov, D. Boychenko, N. S. Dyatlov
{"title":"Approach to Estimation of Modern IC’s Sustainability After Series of Single Events","authors":"G. Davydov, P. Skorobogatov, D. Boychenko, N. S. Dyatlov","doi":"10.1109/RADECS.2017.8696099","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696099","url":null,"abstract":"The approach developed in this work allows one to estimate limiting characteristics of single or series of impacts to provide guaranteed further functionality of modern ICs. It may be used also to estimate fault probability after one or series of impacts with known characteristics.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121754078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Total ionizing dose tests of Power Bipolar Transistors and SiC power devices for JUICE 大功率双极晶体管和SiC功率器件的总电离剂量试验
M. Steffens, S. Höffgen, M. Poizat
{"title":"Total ionizing dose tests of Power Bipolar Transistors and SiC power devices for JUICE","authors":"M. Steffens, S. Höffgen, M. Poizat","doi":"10.1109/RADECS.2017.8696193","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696193","url":null,"abstract":"We present radiation tests performed on Power bipolar transistors, which evaluated concerning their ELDRS sensitivity to TID levels up to 200 krad(Si) with Co60. Additionally a selection of commercial SiC power devices are tested with Co60 at high dose rates to TID levels of 1 Mrad(Si).","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122279416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Proton Test Results for a Commercial Fanout Buffer, a Variable Gain Amplifier, and a ±40V Operational Amplifier 一个商业扇出缓冲器、一个可变增益放大器和一个±40V运算放大器的质子测试结果
R. Milanowski, Slaven Moro, N. Hall, Raichelle J. Aniceto, B. Vermeire, Neal Nicholson
{"title":"Proton Test Results for a Commercial Fanout Buffer, a Variable Gain Amplifier, and a ±40V Operational Amplifier","authors":"R. Milanowski, Slaven Moro, N. Hall, Raichelle J. Aniceto, B. Vermeire, Neal Nicholson","doi":"10.1109/RADECS.2017.8696121","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696121","url":null,"abstract":"We provide proton radiation test results for three commercial analog integrated circuits that have no space-qualified equivalents. Results suggest the components are suitable for some space applications. Additional testing for Enhanced Low Dose Rate Sensitivity and Single Event Latchup is recommended.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124835192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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