大功率双极晶体管和SiC功率器件的总电离剂量试验

M. Steffens, S. Höffgen, M. Poizat
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引用次数: 3

摘要

我们介绍了对功率双极晶体管进行的辐射测试,该测试评估了其对含Co60的TID水平高达200 krad(Si)的ELDRS灵敏度。此外,选择商用SiC功率器件在高剂量率下用Co60测试至1 Mrad(Si)的TID水平。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Total ionizing dose tests of Power Bipolar Transistors and SiC power devices for JUICE
We present radiation tests performed on Power bipolar transistors, which evaluated concerning their ELDRS sensitivity to TID levels up to 200 krad(Si) with Co60. Additionally a selection of commercial SiC power devices are tested with Co60 at high dose rates to TID levels of 1 Mrad(Si).
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