Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696182

E. J. Schioppa, R. Bates, C. Buttar, M. Dalla, J. van Hoorne, T. Kugathasan, D. Maneuski, C. A. M. Tobon, L. Musa, H. Pernegger, P. Riedler, C. Riegel, C. Sbarra, D. Schaefer, Abhishek Sharma, W. Snoeys, C. S. Sánchez

引用次数: 2

Abstract

Monolithic CMOS sensors are being proposed for the upgrade of the ATLAS inner tracker. Sensors fabricated in a new TowerJazz 180nm process, feature full depletion of the sensitive layer and radiation tolerance up to 10¹⁵neq/cm².

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耗尽单片有源像素传感器CMOS工艺的辐射硬度研究

单片CMOS传感器被提议用于ATLAS内部跟踪器的升级。传感器采用新的TowerJazz 180nm工艺制造，具有完全耗尽敏感层和高达1015neq/cm2的辐射容限的特点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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