Total ionizing dose tests of Power Bipolar Transistors and SiC power devices for JUICE

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696193

M. Steffens, S. Höffgen, M. Poizat

引用次数: 3

Abstract

We present radiation tests performed on Power bipolar transistors, which evaluated concerning their ELDRS sensitivity to TID levels up to 200 krad(Si) with Co60. Additionally a selection of commercial SiC power devices are tested with Co60 at high dose rates to TID levels of 1 Mrad(Si).

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大功率双极晶体管和SiC功率器件的总电离剂量试验

我们介绍了对功率双极晶体管进行的辐射测试，该测试评估了其对含Co60的TID水平高达200 krad(Si)的ELDRS灵敏度。此外，选择商用SiC功率器件在高剂量率下用Co60测试至1 Mrad(Si)的TID水平。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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