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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)最新文献

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Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks 多晶硅/HfAlOx栅极堆界面层热稳定性的改善
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159203
R. Mitsuhashi, A. Horiuchi, A. Uedono, K. Torii
{"title":"Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks","authors":"R. Mitsuhashi, A. Horiuchi, A. Uedono, K. Torii","doi":"10.1109/IWGI.2003.159203","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159203","url":null,"abstract":"In this paper we investigate the influence of O/sub 2/ partial pressure on the IL thickness during post high-k deposition annealing. The effect of high temperature annealing after IL formation on the oxidation resistance of the IL is also reported.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129840551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides 高介电常数介电氧化物的原子层沉积化学、机理及相关物理性质
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159195
K. Kukli
{"title":"Atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides","authors":"K. Kukli","doi":"10.1109/IWGI.2003.159195","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159195","url":null,"abstract":"In this paper, atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides HfO/sub 2/ and ZrO/sub 2/ thin films were studied.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116126962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Solution-based fabrication of high-k gate dielectrics 基于溶液的高k栅极电介质制造
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159179
Y. Aoki, T. Kunitake
{"title":"Solution-based fabrication of high-k gate dielectrics","authors":"Y. Aoki, T. Kunitake","doi":"10.1109/IWGI.2003.159179","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159179","url":null,"abstract":"In this paper, we conducted fabrication of ultrathin films from conventional dielectric materials MO/sub x/ (M=Ti, Zr) as well as from binary oxide composites MO/sub x/-MO/sub y/ (M=Ta, La).","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117133330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A study on the V/sub th/ shift of HfAlOx MISFETs with n+/p+ poly-Si and TiN gate electrodes fabricated by replacement gate process 替换栅法制备n+/p+多晶硅和TiN栅电极的hhfalox misfet的V/sub / shift研究
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159192
Y. Akasaka, K. Miyagawa, H. Syoji, O. Ogawa, T. Kawahara, A. Horiuchi, R. Mitsuhashi, T. Maeda, A. Muto, N. Kasai, M. Yasuhira, T. Arikado
{"title":"A study on the V/sub th/ shift of HfAlOx MISFETs with n+/p+ poly-Si and TiN gate electrodes fabricated by replacement gate process","authors":"Y. Akasaka, K. Miyagawa, H. Syoji, O. Ogawa, T. Kawahara, A. Horiuchi, R. Mitsuhashi, T. Maeda, A. Muto, N. Kasai, M. Yasuhira, T. Arikado","doi":"10.1109/IWGI.2003.159192","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159192","url":null,"abstract":"The V/sub th/ shift of a poly-Si/high-k MISFET has been reported. The observed V/sub t/h of p/sup +/ poly-Si/HfAlO/sub x/ or HfSiO/sub x/ is much higher than that of the p/sup +/ poly/SiON MISFET. The controlled V/sub th/ of the PMISFET is strongly required for the application of high-k insulators. In this study, we fabricated HfAlO/sub x/ MISFETs with n/sup +//p/sup +/ poly-Si and TiN gate electrodes by using the same \"replacement gate\" process. We found that the difference of V/sub fb/ between n/sup +/ poly-Si-/HfAlOx and p/sup +/ poly-Si/HfAlO/sub x/ systems is independent of channel types and much smaller than 1 V i.e. the theoretical difference between the work function of n/sup +/ and p/sup +/ Si. On the other hand, the TiN/HfAlO/sub x/ system shows the appropriate V/sub fb/ expected from work function.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123221635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ru gate electrode for a La-oxide gate insulator deposited by metalorganic chemical vapor deposition 金属有机化学气相沉积法制备氧化镧栅极绝缘子的Ru栅极电极
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159191
T. Shimizu, K. Ishii, E. Suzuki
{"title":"Ru gate electrode for a La-oxide gate insulator deposited by metalorganic chemical vapor deposition","authors":"T. Shimizu, K. Ishii, E. Suzuki","doi":"10.1109/IWGI.2003.159191","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159191","url":null,"abstract":"In this work we propose the Ru metal gate for a lanthanide oxide gate insulator and show satisfactory electrical properties of Ru/La oxide stack MOSFETs.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"383 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122350921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Implementation of high-k gate dielectrics - a status update 实现高k栅极电介质-状态更新
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159172
S. De Gendt, J. Chen, R. Carter, E. Cartier, M. Caymax, M. Claes, T. Conard, A. Delabie, W. Deweerd, V. Kaushik, A. Kerber, S. Kubicek, J. Maes, M. Niwa, L. Pantisano, R. Puurunen, L. Ragnarsson, T. Schram, Y. Shimamoto, W. Tsai, E. Rohr, S. Van Elshocht, T. Witters, E. Young, C. Zhao, M. Heyns
{"title":"Implementation of high-k gate dielectrics - a status update","authors":"S. De Gendt, J. Chen, R. Carter, E. Cartier, M. Caymax, M. Claes, T. Conard, A. Delabie, W. Deweerd, V. Kaushik, A. Kerber, S. Kubicek, J. Maes, M. Niwa, L. Pantisano, R. Puurunen, L. Ragnarsson, T. Schram, Y. Shimamoto, W. Tsai, E. Rohr, S. Van Elshocht, T. Witters, E. Young, C. Zhao, M. Heyns","doi":"10.1109/IWGI.2003.159172","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159172","url":null,"abstract":"The authors discuss Hf-Al mixed oxide characteristics, and applications to MOS capacitors and transistors. XRD an TEM analyses are performed and crystallisation behaviour analysed.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132246114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effects of Hf sources, oxidizing agents, and NH3 radicals on properties of HfAlOx films prepared by atomic layer deposition Hf源、氧化剂和NH3自由基对原子层沉积hhfalox膜性能的影响
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159177
T. Kawahara, K. Torii, R. Mitsuhashi, A. Mutoh, A. Horiuchi, H. Ito, H. Kitajima
{"title":"Effects of Hf sources, oxidizing agents, and NH3 radicals on properties of HfAlOx films prepared by atomic layer deposition","authors":"T. Kawahara, K. Torii, R. Mitsuhashi, A. Mutoh, A. Horiuchi, H. Ito, H. Kitajima","doi":"10.1109/IWGI.2003.159177","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159177","url":null,"abstract":"In this paper, we investigated the influence of the combination of precursors on the deposition rate, the uniformity, the amount of residual impurities, together with electrical properties.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124444049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Degradation of dielectric characteristics of underlying ultrathin SiO2 films by Al adsorption in high vacuum 高真空Al吸附降解下垫层超薄SiO2薄膜的介电特性
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159173
M. Tanabe, M. Goto, A. Uedono, K. Yamabe
{"title":"Degradation of dielectric characteristics of underlying ultrathin SiO2 films by Al adsorption in high vacuum","authors":"M. Tanabe, M. Goto, A. Uedono, K. Yamabe","doi":"10.1109/IWGI.2003.159173","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159173","url":null,"abstract":"Electrical characteristics of underlying thin SiO/sub 2/ films after the Al adsorption and the following removal of it are investigated using MOS capacitors. Al adsorption caused the SiO/sub 2/ thinning and increases of leakage current.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126278104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The influence of silicon nitride cap on NBTI and fermi pinning in HfO2 gate stacks 氮化硅帽对HfO2栅堆中NBTI和费米钉扎的影响
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 1900-01-01 DOI: 10.1109/IWGI.2003.159174
T. Sasaki, F. Ootsuka, T. Hoshi, T. Kawahara, T. Maeda, M. Yasuhira, T. Arikado
{"title":"The influence of silicon nitride cap on NBTI and fermi pinning in HfO2 gate stacks","authors":"T. Sasaki, F. Ootsuka, T. Hoshi, T. Kawahara, T. Maeda, M. Yasuhira, T. Arikado","doi":"10.1109/IWGI.2003.159174","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159174","url":null,"abstract":"In this paper, we report the improvements in the interfacial reaction between the gate dielectric and the gate electrode by adding SiN cap layer on HfO/sub 2/. We also report the drastic improvements in the gate leakage, V/sub th/ shift and NBTI.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133427476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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