Hf源、氧化剂和NH3自由基对原子层沉积hhfalox膜性能的影响

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159177

T. Kawahara, K. Torii, R. Mitsuhashi, A. Mutoh, A. Horiuchi, H. Ito, H. Kitajima

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引用次数: 4

摘要

在本文中，我们研究了前驱体的组合对沉积速率、均匀性、残留杂质量以及电性能的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effects of Hf sources, oxidizing agents, and NH3 radicals on properties of HfAlOx films prepared by atomic layer deposition

In this paper, we investigated the influence of the combination of precursors on the deposition rate, the uniformity, the amount of residual impurities, together with electrical properties.

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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