Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)最新文献

HfSiON gate dielectric for CMOS applications 用于CMOS应用的HfSiON栅极电介质

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159199

M. Takayanagi, T. Watanabe, R. Iijima, A. Kaneko, S. Inumiya, I. Hirano, K. Sekine, A. Nishiyama, K. Eguchi, Y. Tsunashima

引用次数: 2

Advanced oxynitride gate dielectrics for CMOS applications 用于CMOS应用的先进氮化氧栅极电介质

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159201

J. Yugami, S. Tsujikawa, R. Tsuchiya, S. Saito, Y. Shimamoto, K. Torii, T. Mine, T. Onai

{"title":"Advanced oxynitride gate dielectrics for CMOS applications","authors":"J. Yugami, S. Tsujikawa, R. Tsuchiya, S. Saito, Y. Shimamoto, K. Torii, T. Mine, T. Onai","doi":"10.1109/IWGI.2003.159201","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159201","url":null,"abstract":"A most preferable candidate of gate dielectrics in advanced CMOS to satisfy the requirement of an ITRS roadmap is still SiON, especially for high-performance and low-power devices. To advance the efficiency of SiON gate dielectrics, the keyword is N-rich. A high nitrogen concentration leads to low leakage current and high immunity to impurity penetration. However, in N-rich SiON, the mobility degradation and NBTI enhancement due to fixed charges formed by incorporated nitrogen atoms near the interface are problems. To solve these problems, we developed a SiN gate dielectric with an oxygen-enriched interface (OI-SiN). A process in which oxygen atoms are incorporated after forming SiN provides enhanced nitrogen concentration and an oxygen-enriched interface while simultaneously suppressing fixed charges, even in dielectrics having sub-nm EOT. This OI-SiN has good immunity against impurity penetration and provides superior device performance compared to the conventional SiON. Furthermore, the OI-SiN was much effective as an interfacial layer of high-K gate stack to solve problems in high-K gate dielectric.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124781259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Improvement in the uniformity and the thermal stability of Hf-silicate gate dielectric by plasma-nitridation 等离子体氮化改善硅酸铪栅极介质均匀性和热稳定性

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159180

S. Kamiyama, T. Aoyama, Y. Tsutsumi, H. Takada, A. Horiuchi, T. Maeda, K. Torii, H. Kitajima, T. Arikado

引用次数: 6

Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices 空穴捕获对PMOS器件中NBTI降解和恢复的影响

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159188

H. Lin, D. Lee, S.-C. Ou, C. Chien, T. Huang

引用次数: 5

Gate dielectrics on strained-Ge layers on Si/sub 1-x/Gex/Si virtual substrates Si/sub - 1-x/Gex/Si虚拟衬底上应变ge层的栅极介电体

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159181

S. Bhattacharya, J. Mccarthy, B. Armstrong, H. Gamble, G. Dalapati, S. Das, C. Maiti, T. Perova, A. Moore

引用次数: 1

Effects of nitrogen incorporation HfAlOx films on gate leakage current from XPS study of Hf bonding states XPS研究Hf键态对HfAlOx膜栅漏电流的影响

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159208

T. Nishimura, K. Iwamoto, K. Tominaga, T. Yasuda, W. Mizubayashi, S. Fujii, T. Nabatame, A. Toriumi

引用次数: 2

Gate dielectric scaling for high-performance CMOS: from SiO2 to high-K 高性能CMOS栅极介电尺度:从SiO2到高k

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159198

R. Chau, S. Datta, M. Doczy, J. Kavalieros, M. Metz

引用次数: 64

In-situ HfSiON/SiO2 gate dielectric fabrication using hot wall batch system 热壁间歇系统原位制备HfSiON/SiO2栅极介质

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159207

T. Aoyama, S. Kamiyama, Y. Tamura, T. Sasaki, R. Mitsuhashi, K. Torii, H. Kitajima, T. Arikado

引用次数: 5

Vapor-liquid hybrid deposition (VALID) of hafnium silicate films using Hf(O/sup t/C4H/sub 9/)4 and Si(OC2H5)4 precursors 以Hf(O/sup /C4H/sub / 9)4和Si(OC2H5)4为前驱体的气液混合沉积(VALID)硅酸铪薄膜

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159175

Y. Xuan, T. Yasuda

引用次数: 0

Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems Ge/HfO2在Si/HfO2 MOS系统上的进一步EOT缩放

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159209

K. Kita, M. Sasagawa, K. Tomida, M. Tohyama, K. Kyuno, A. Toriumi

引用次数: 2