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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)最新文献

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Resonant tunneling in stacked dielectrics: a novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics 叠层介质中的共振隧穿:一种获取先进栅极介质中电子隧穿质导能带偏移能积的新方法
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159189
C. Hinkle, C. Fulton, R. Nemanich, G. Lucovsky
{"title":"Resonant tunneling in stacked dielectrics: a novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics","authors":"C. Hinkle, C. Fulton, R. Nemanich, G. Lucovsky","doi":"10.1109/IWGI.2003.159189","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159189","url":null,"abstract":"We report on a novel method for obtaining the electron tunneling mass-conduction band offset energy products for high-k gate dielectrics based on a quantum mechanical WKB-approximation.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125874982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Separate and independent control of interfacial band alignments and dielectric constants in complex rare-earth/transition metal (Re/Tm) oxides 稀土/过渡金属(Re/Tm)复合氧化物中界面能带排列和介电常数的分离和独立控制
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159196
G. Lucovsky, Yu Zhang, J. Whitten, D. Scholm, J. Freeouf
{"title":"Separate and independent control of interfacial band alignments and dielectric constants in complex rare-earth/transition metal (Re/Tm) oxides","authors":"G. Lucovsky, Yu Zhang, J. Whitten, D. Scholm, J. Freeouf","doi":"10.1109/IWGI.2003.159196","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159196","url":null,"abstract":"This paper introduced a new class of complex rare earth/transition metal oxides in which the energies of the lowest conduction band states can be controlled through bonding of the constituent Re and Tm atoms to a common oxygen atom. The electronic structure of GdScO/sub 3/, the electronic band edge structure of Sc/sub 2/O/sub 3/, and an ab initio theory were studied.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129868253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of interactions between HfO2 and poly-Si on MOSCAP and MOSFET electrical behavior HfO2和多晶硅相互作用对mosscap和MOSFET电学行为的影响
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159185
V. Kaushik, E. Rohr, S. De Gendt, A. Delabie, S. Van Elshocht, M. Claes, X. Shi, Y. Shimamoto, L. Ragnarsson, T. Witters, Y. Manabe, M. Heyns
{"title":"Effects of interactions between HfO2 and poly-Si on MOSCAP and MOSFET electrical behavior","authors":"V. Kaushik, E. Rohr, S. De Gendt, A. Delabie, S. Van Elshocht, M. Claes, X. Shi, Y. Shimamoto, L. Ragnarsson, T. Witters, Y. Manabe, M. Heyns","doi":"10.1109/IWGI.2003.159185","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159185","url":null,"abstract":"In this paper, we report on the interactions between HfO/sub 2/ and poly-Si with varying HfO/sub 2/ films. The impact HfO/sub 2/ interaction on important parameters such as gate leakage, yield, flatband voltage and mobility were discussed.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129370441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Extending the life of N/O stack gate dielectric with gate electrode engineering 利用栅电极工程延长N/O堆栅电介质寿命
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159200
Q. Xiang, Z. Krivokapic, W. Maszara, M. Lin
{"title":"Extending the life of N/O stack gate dielectric with gate electrode engineering","authors":"Q. Xiang, Z. Krivokapic, W. Maszara, M. Lin","doi":"10.1109/IWGI.2003.159200","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159200","url":null,"abstract":"Nitride/oxynitride (N/O) stack gate dielectrics show significant leakage reduction and strong boron penetration resistance as compared to oxynitrides. The life of the N/O stack can be further extended by gate electrode engineering. With pre-doped poly-Si gates for both N- and P-MOS devices, poly-Si gate depletion can be minimized and inversion Tox can be reduced. Employment of NiSi can further reduce inversion Tox by minimizing gate dopant deactivation. In addition, a fully-silicided (FUSI) NiSi metal gate electrode totally eliminates poly-Si gate depletion and reduces the inversion Tox by 4-6A. Both FDSOI devices and strained Si devices with N/O stack and FUSI metal gate showed performance improvements and no degradation in gate dielectric reliability.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122513153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric 1.6 nm栅介电介质nmosfet中氮相关的增强可靠性退化
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159183
Ching-Wei Chen, C. Chien, S.-C. Ou, T. Perng, Da-Yuan Lee, Yi-Cheng Chen, Horng-Chih Lin, Tiao-Yuan Huang, Chun-Yen Chang
{"title":"Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric","authors":"Ching-Wei Chen, C. Chien, S.-C. Ou, T. Perng, Da-Yuan Lee, Yi-Cheng Chen, Horng-Chih Lin, Tiao-Yuan Huang, Chun-Yen Chang","doi":"10.1109/IWGI.2003.159183","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159183","url":null,"abstract":"Although nitrogen incorporation into ultra-thin gate dielectrics could reduce gate leakage current effectively, in this study we found that nitrogen-induced paramagnetic electron trap precursors will enhance hot-electron-induced degradation in deep sub-micron nMOSFETs. These nitrogen-related electron traps induced by hot electron injection could eventually become a severe long-term reliability concern for sub-100 mn technology.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127171098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved performance of FETs with HfAlOx gate dielectrics using optimized poly-SiGe gate electrodes 采用优化的多晶硅栅极电极，改进了hhfalox栅极介质的fet性能
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159186
A. Muto, H. Ohji, T. Kawahara, T. Maeda, K. Torii, H. Kitajima
{"title":"Improved performance of FETs with HfAlOx gate dielectrics using optimized poly-SiGe gate electrodes","authors":"A. Muto, H. Ohji, T. Kawahara, T. Maeda, K. Torii, H. Kitajima","doi":"10.1109/IWGI.2003.159186","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159186","url":null,"abstract":"In this study, we investigated the growth manner of poly-Si/poly-SiGe layered films on HfAlO/sub x/ films with various Hf contents. The effect of the poly-SiGe gate electrode on FET performances was also evaluated.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114588792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Hf-based high-K dielectrics hf基高k介电材料
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159171
Jack C. Lee
{"title":"Hf-based high-K dielectrics","authors":"Jack C. Lee","doi":"10.1109/IWGI.2003.159171","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159171","url":null,"abstract":"We report recent results on the effects of high-temperature forming gas and deuterium anneals on performance and reliability characteristics and the effects of AC and DC stress on bias-temperature instability and time-dependent dielectrics breakdown.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126432146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
EOT scaling and device issues for high-k gate dielectrics 高k栅极电介质的EOT缩放和器件问题
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159206
M. Gardner, S. Gopalan, J. Gutt, J. Peterson, Hong-jyh Li, H. Huff
{"title":"EOT scaling and device issues for high-k gate dielectrics","authors":"M. Gardner, S. Gopalan, J. Gutt, J. Peterson, Hong-jyh Li, H. Huff","doi":"10.1109/IWGI.2003.159206","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159206","url":null,"abstract":"In this paper, we fabricate a high-k transistor for equivalent oxide thickness (EOT) scaling involving ALD and MOCVD.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127088906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Charge state dependent point defect in high-k dielectric HfO2 高k介电介质HfO2中电荷态依赖点缺陷
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159178
K. Shiraishi, M. Saito, T. Ohno
{"title":"Charge state dependent point defect in high-k dielectric HfO2","authors":"K. Shiraishi, M. Saito, T. Ohno","doi":"10.1109/IWGI.2003.159178","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159178","url":null,"abstract":"In this paper, we have investigated the basic properties of O vacancies in HfO/sub 2/ by the first principle calculations. We have calculated the charge state dependent properties of an O vacancy in cubic-HfO/sub 2/.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132098483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-thin SiN gate dielectric fabricated by N2 plasma direct nitridation N2等离子体直接氮化制备超薄SiN栅极电介质
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159184
M. Inoue, J. Tsuchimoto, M. Mizutani, J. Yugami, Y. Ohno, M. Yoneda
{"title":"Ultra-thin SiN gate dielectric fabricated by N2 plasma direct nitridation","authors":"M. Inoue, J. Tsuchimoto, M. Mizutani, J. Yugami, Y. Ohno, M. Yoneda","doi":"10.1109/IWGI.2003.159184","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159184","url":null,"abstract":"In this study, we used direct nitridation technique using N/sub 2/ plasma to from ultra-thin SiN gate dielectric and successfully fabricated poly-Si gate CMOS device with mass production compatible fabrication flow including source and drain silicidation and 1050/spl deg/C spike anneal. We also studied these SiN gate dielectrics from reliability including dielectric breakdown.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133883315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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