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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)最新文献

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Electrical characteristics of rare-earth oxides stacked-layer structures 稀土氧化物叠层结构的电特性
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159176
S. Ohmi, I. Ueda, Y. Kobayashi, K. Tsutsui, H. Iwai
{"title":"Electrical characteristics of rare-earth oxides stacked-layer structures","authors":"S. Ohmi, I. Ueda, Y. Kobayashi, K. Tsutsui, H. Iwai","doi":"10.1109/IWGI.2003.159176","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159176","url":null,"abstract":"In this paper, Lu/sub 2/O/sub 3//La/sub 2/O/sub 3/ stacked layer structures of rare earth oxides were investigated. The La/sub 2/O/sub 3/ layer would be expected to form a uniform silicate layer with relatively high dielectric constant compared to SiO/sub 2/ after the annealing process so that the leakage current characteristics would be improved for the stacked layer structures compared to those of the single Lu/sub 2/O/sub 3/ layer.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125824148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties of tantalum silicate thin films prepared by metalorganic decomposition 金属有机分解制备硅酸钽薄膜的性能研究
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159194
K. Salam, H. Saito, H. Fukuda
{"title":"Properties of tantalum silicate thin films prepared by metalorganic decomposition","authors":"K. Salam, H. Saito, H. Fukuda","doi":"10.1109/IWGI.2003.159194","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159194","url":null,"abstract":"The aim of this paper is to study the properties of the Ta/sub 2/O/sub 5/-SiO/sub 2/ thin films grown by MOD followed by rapid thermal annealing . The film is characterised by XRD, AFM and its electrical properties are studied.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125028757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Method of increasing gate nitridation and its impact on CMOS devices 提高栅极氮化的方法及其对CMOS器件的影响
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159182
V. Gopinath, V. Hornback, Y. Le, A. Kamath, L. Duong, J. Lin, M. Mirabedini, W. Yeh
{"title":"Method of increasing gate nitridation and its impact on CMOS devices","authors":"V. Gopinath, V. Hornback, Y. Le, A. Kamath, L. Duong, J. Lin, M. Mirabedini, W. Yeh","doi":"10.1109/IWGI.2003.159182","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159182","url":null,"abstract":"A process that combines shallow nitrogen implant with rapid thermal nitridation is shown to double the nitrogen content in ultra-thin oxynitrides for the same EOT. Implanted nitrogen acts as a second source of nitrogen during gate dielectric formation and amount of incorporated nitrogen is directly proportional to the implant dose. Nitridation is shown to have opposite effects on N and PMOS mobilities. PMOS mobilities show a continuous decrease with increasing gate nitrogen content. In addition, increasing nitridation leads to severe NBTI effect on PMOS devices. Therefore, a trade-off between boron penetration resistance and performance for PMOS transistors is indicated.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121569203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dependence of electron mobility by remote coulomb scattering on dielectric constant distribution in stacked gate dielectrics 远距离库仑散射下电子迁移率对堆叠栅介质中介电常数分布的依赖性
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159205
M. Ono, T. Ishihara, A. Nishiyama
{"title":"Dependence of electron mobility by remote coulomb scattering on dielectric constant distribution in stacked gate dielectrics","authors":"M. Ono, T. Ishihara, A. Nishiyama","doi":"10.1109/IWGI.2003.159205","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159205","url":null,"abstract":"The influence of the dielectric constant distribution on the electron mobility determined by remote Coulomb scattering due to fixed charges in gate dielectrics and ionized impurities in gate electrodes using numerical simulations and a physical model were investigated.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115705446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Energy barrier heights of ultra-thin silicon dioxide films with different metal gates 不同金属栅极的超薄二氧化硅薄膜的能垒高度
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159193
N. Yoshii, S. Morita, A. Shinozaki, M. Aoki, M. Morita
{"title":"Energy barrier heights of ultra-thin silicon dioxide films with different metal gates","authors":"N. Yoshii, S. Morita, A. Shinozaki, M. Aoki, M. Morita","doi":"10.1109/IWGI.2003.159193","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159193","url":null,"abstract":"In this study, we have examined a way to determine the barrier height of ultra-thin SiO/sub 2/ films by current density-oxide voltage characteristics of MOS diode using different metal gates.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125645327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation 通过周期性等离子体氮化，在低电压下大幅提高了90纳米移动应用的NBTI寿命
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159202
T. Kawae, Y. Minemura, S. Fukuda, T. Hirano, Y. Suzuki, M. Saito, S. Kadomura, S. Samukawa
{"title":"Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation","authors":"T. Kawae, Y. Minemura, S. Fukuda, T. Hirano, Y. Suzuki, M. Saito, S. Kadomura, S. Samukawa","doi":"10.1109/IWGI.2003.159202","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159202","url":null,"abstract":"The controlling concentration and location of nitrogen in SiON film by using TM plasma, and the improvement in the NBTI lifetime due to shallow nitrogen profile of fabricated specimen were reported.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"225 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122363262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation 用正电子湮灭法研究HfAlOx栅极介质在MOS结构中的缺陷
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159197
A. Uedono, R. Mitsuhashi, A. Horiuchi, K. Torii, K. Yamabe, K. Yamada, R. Suzuki, T. Ohdaira, T. Mikado
{"title":"Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation","authors":"A. Uedono, R. Mitsuhashi, A. Horiuchi, K. Torii, K. Yamabe, K. Yamada, R. Suzuki, T. Ohdaira, T. Mikado","doi":"10.1109/IWGI.2003.159197","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159197","url":null,"abstract":"In this article, we used monoenergetic positron beams to study defects in thin HfAlO/sub x/ films deposited on Si substrates. The positrons implanted into HfAlO/sub x/ were found to annihilate from the trapped state in open spaces; the size of the open spaces was larger than that of point defects such as monovacancies or divacancies.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125147832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative study of carrier mobility and threshold voltage between N- and p-MOSFETs in TaN gate CMOS with EOT = 1.5-2 nm HfAlOx EOT = 1.5-2 nm HfAlOx的TaN栅极CMOS中N-和p- mosfet载流子迁移率和阈值电压的比较研究
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159204
H. Ota, H. Hisamatsu, N. Yasuda, W. Mizubayashi, M. Ohno, K. Iwamoto, K. Tominaga, M. Kadoshima, N. Yamagishi, K. Akiyama, K. Yamamoto, T. Nabatame, T. Horikawa, A. Toriumi
{"title":"Comparative study of carrier mobility and threshold voltage between N- and p-MOSFETs in TaN gate CMOS with EOT = 1.5-2 nm HfAlOx","authors":"H. Ota, H. Hisamatsu, N. Yasuda, W. Mizubayashi, M. Ohno, K. Iwamoto, K. Tominaga, M. Kadoshima, N. Yamagishi, K. Akiyama, K. Yamamoto, T. Nabatame, T. Horikawa, A. Toriumi","doi":"10.1109/IWGI.2003.159204","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159204","url":null,"abstract":"This paper demonstrates the performances of fabricated metal gate CMOS, and then focuses on fundamental issues of high-k CMOS. It is shown that a comparative study between n- and p-MOSFETs provides useful information on the V/sub th/ instability and the degradation.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"71 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133490587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-organized Si suboxide (SiOx, x<2) interfacial layers - optimization of performance and reliability in advanced devices 自组织亚氧化硅(SiOx, x<2)接口层-先进器件中性能和可靠性的优化
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159187
G. Lucovsky, J. C. Phillips
{"title":"Self-organized Si suboxide (SiOx, x<2) interfacial layers - optimization of performance and reliability in advanced devices","authors":"G. Lucovsky, J. C. Phillips","doi":"10.1109/IWGI.2003.159187","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159187","url":null,"abstract":"Self-organized Si suboxide (SiO/sub x/, x<2) interfacial layers were characterised by medium energy ion scattering, single wavelength ellipsometry, synchrotron X-ray photoelectron spectroscopy and optical second harmonic generation.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129652139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Proposal of quantum well gate insulating (QWGI) structures for band offset engineering from first-principles calculations
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI: 10.1109/IWGI.2003.159190
T. Schimizu, T. Yamaguchi
{"title":"Proposal of quantum well gate insulating (QWGI) structures for band offset engineering from first-principles calculations","authors":"T. Schimizu, T. Yamaguchi","doi":"10.1109/IWGI.2003.159190","DOIUrl":"https://doi.org/10.1109/IWGI.2003.159190","url":null,"abstract":"The objective of this study is to provide a method to make the conduction band (CB) offset large in order to utilize STO-related materials as a gate insulator: to propose a new nanoscaled quantum-well structure of a gate insulator, using STO-related materials with large /spl epsiv/.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129808147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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