远距离库仑散射下电子迁移率对堆叠栅介质中介电常数分布的依赖性

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159205

M. Ono, T. Ishihara, A. Nishiyama

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引用次数: 0

摘要

采用数值模拟和物理模型研究了介电常数分布对栅极介质中固定电荷和栅极电极中电离杂质引起的远程库仑散射所确定的电子迁移率的影响。

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Dependence of electron mobility by remote coulomb scattering on dielectric constant distribution in stacked gate dielectrics

The influence of the dielectric constant distribution on the electron mobility determined by remote Coulomb scattering due to fixed charges in gate dielectrics and ionized impurities in gate electrodes using numerical simulations and a physical model were investigated.

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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