稀土氧化物叠层结构的电特性

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159176

S. Ohmi, I. Ueda, Y. Kobayashi, K. Tsutsui, H. Iwai

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引用次数: 0

摘要

本文研究了稀土氧化物的Lu/sub 2/O/sub 3/ La/sub 2/O/sub 3/叠层结构。经过退火处理后，La/sub 2/O/sub 3/层有望形成相对于SiO/sub 2/层具有较高介电常数的均匀硅酸盐层，与单一的Lu/sub 2/O/sub 3/层相比，堆叠层结构的漏电流特性将得到改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrical characteristics of rare-earth oxides stacked-layer structures

In this paper, Lu/sub 2/O/sub 3//La/sub 2/O/sub 3/ stacked layer structures of rare earth oxides were investigated. The La/sub 2/O/sub 3/ layer would be expected to form a uniform silicate layer with relatively high dielectric constant compared to SiO/sub 2/ after the annealing process so that the leakage current characteristics would be improved for the stacked layer structures compared to those of the single Lu/sub 2/O/sub 3/ layer.

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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