Dependence of electron mobility by remote coulomb scattering on dielectric constant distribution in stacked gate dielectrics

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159205

M. Ono, T. Ishihara, A. Nishiyama

引用次数: 0

Abstract

The influence of the dielectric constant distribution on the electron mobility determined by remote Coulomb scattering due to fixed charges in gate dielectrics and ionized impurities in gate electrodes using numerical simulations and a physical model were investigated.

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远距离库仑散射下电子迁移率对堆叠栅介质中介电常数分布的依赖性

采用数值模拟和物理模型研究了介电常数分布对栅极介质中固定电荷和栅极电极中电离杂质引起的远程库仑散射所确定的电子迁移率的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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