通过周期性等离子体氮化，在低电压下大幅提高了90纳米移动应用的NBTI寿命

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159202

T. Kawae, Y. Minemura, S. Fukuda, T. Hirano, Y. Suzuki, M. Saito, S. Kadomura, S. Samukawa

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引用次数: 1

摘要

本文报道了利用TM等离子体控制氮在硅膜中的浓度和位置，以及制备样品的浅氮分布对NBTI寿命的改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation

The controlling concentration and location of nitrogen in SiON film by using TM plasma, and the improvement in the NBTI lifetime due to shallow nitrogen profile of fabricated specimen were reported.

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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