金属有机分解制备硅酸钽薄膜的性能研究

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159194

K. Salam, H. Saito, H. Fukuda

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引用次数: 1

摘要

本文的目的是研究用MOD生长Ta/sub 2/O/sub 5/-SiO/sub 2/薄膜的性能，然后进行快速热退火。采用XRD、AFM对薄膜进行了表征，并对其电学性能进行了研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Properties of tantalum silicate thin films prepared by metalorganic decomposition

The aim of this paper is to study the properties of the Ta/sub 2/O/sub 5/-SiO/sub 2/ thin films grown by MOD followed by rapid thermal annealing . The film is characterised by XRD, AFM and its electrical properties are studied.

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来源期刊

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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