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自组织亚氧化硅(SiOx, x<2)接口层-先进器件中性能和可靠性的优化

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159187
G. Lucovsky, J. C. Phillips
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引用次数: 0

摘要

采用中能离子散射、单波长椭偏、同步加速器x射线光电子能谱和光学二次谐波等方法对自组织亚氧化硅(SiO/sub x/， x<2)界面层进行了表征。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Self-organized Si suboxide (SiOx, x<2) interfacial layers - optimization of performance and reliability in advanced devices
Self-organized Si suboxide (SiO/sub x/, x<2) interfacial layers were characterised by medium energy ion scattering, single wavelength ellipsometry, synchrotron X-ray photoelectron spectroscopy and optical second harmonic generation.
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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)
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