Ultra-thin SiN gate dielectric fabricated by N2 plasma direct nitridation

Abstract

In this study, we used direct nitridation technique using N/sub 2/ plasma to from ultra-thin SiN gate dielectric and successfully fabricated poly-Si gate CMOS device with mass production compatible fabrication flow including source and drain silicidation and 1050/spl deg/C spike anneal. We also studied these SiN gate dielectrics from reliability including dielectric breakdown.