Resonant tunneling in stacked dielectrics: a novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159189

C. Hinkle, C. Fulton, R. Nemanich, G. Lucovsky

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Abstract

We report on a novel method for obtaining the electron tunneling mass-conduction band offset energy products for high-k gate dielectrics based on a quantum mechanical WKB-approximation.

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叠层介质中的共振隧穿:一种获取先进栅极介质中电子隧穿质导能带偏移能积的新方法

本文报道了一种基于量子力学wkb近似获得高k栅极电介质电子隧穿质导能带偏移能积的新方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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