N2等离子体直接氮化制备超薄SiN栅极电介质

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159184

M. Inoue, J. Tsuchimoto, M. Mizutani, J. Yugami, Y. Ohno, M. Yoneda

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引用次数: 2

摘要

在本研究中，我们采用N/sub /等离子体直接氮化技术从超薄SiN栅极介质中制备了多晶硅栅极CMOS器件，并成功地实现了批量生产兼容的制造流程，包括源硅化和漏硅化以及1050/spl℃的尖峰退火。我们还从介电击穿等可靠性方面研究了这些SiN栅极介质。

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Ultra-thin SiN gate dielectric fabricated by N2 plasma direct nitridation

In this study, we used direct nitridation technique using N/sub 2/ plasma to from ultra-thin SiN gate dielectric and successfully fabricated poly-Si gate CMOS device with mass production compatible fabrication flow including source and drain silicidation and 1050/spl deg/C spike anneal. We also studied these SiN gate dielectrics from reliability including dielectric breakdown.

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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