HfO2和多晶硅相互作用对mosscap和MOSFET电学行为的影响

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159185

V. Kaushik, E. Rohr, S. De Gendt, A. Delabie, S. Van Elshocht, M. Claes, X. Shi, Y. Shimamoto, L. Ragnarsson, T. Witters, Y. Manabe, M. Heyns

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引用次数: 2

摘要

本文报道了不同HfO/ sub2 /薄膜下HfO/ sub2 /与多晶硅的相互作用。讨论了HfO/sub /相互作用对栅漏、良率、平带电压和迁移率等重要参数的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effects of interactions between HfO2 and poly-Si on MOSCAP and MOSFET electrical behavior

In this paper, we report on the interactions between HfO/sub 2/ and poly-Si with varying HfO/sub 2/ films. The impact HfO/sub 2/ interaction on important parameters such as gate leakage, yield, flatband voltage and mobility were discussed.

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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