M. Gardner, S. Gopalan, J. Gutt, J. Peterson, Hong-jyh Li, H. Huff
{"title":"高k栅极电介质的EOT缩放和器件问题","authors":"M. Gardner, S. Gopalan, J. Gutt, J. Peterson, Hong-jyh Li, H. Huff","doi":"10.1109/IWGI.2003.159206","DOIUrl":null,"url":null,"abstract":"In this paper, we fabricate a high-k transistor for equivalent oxide thickness (EOT) scaling involving ALD and MOCVD.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"EOT scaling and device issues for high-k gate dielectrics\",\"authors\":\"M. Gardner, S. Gopalan, J. Gutt, J. Peterson, Hong-jyh Li, H. Huff\",\"doi\":\"10.1109/IWGI.2003.159206\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we fabricate a high-k transistor for equivalent oxide thickness (EOT) scaling involving ALD and MOCVD.\",\"PeriodicalId\":221442,\"journal\":{\"name\":\"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWGI.2003.159206\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWGI.2003.159206","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
