高k介电介质HfO2中电荷态依赖点缺陷

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159178

K. Shiraishi, M. Saito, T. Ohno

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引用次数: 0

摘要

本文用第一性原理计算方法研究了HfO/ sub2 /中O空位的基本性质。我们计算了立方hfo / sub2 /中O空位的电荷态依赖性质。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Charge state dependent point defect in high-k dielectric HfO2

In this paper, we have investigated the basic properties of O vacancies in HfO/sub 2/ by the first principle calculations. We have calculated the charge state dependent properties of an O vacancy in cubic-HfO/sub 2/.

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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