1.6 nm栅介电介质nmosfet中氮相关的增强可靠性退化

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159183

Ching-Wei Chen, C. Chien, S.-C. Ou, T. Perng, Da-Yuan Lee, Yi-Cheng Chen, Horng-Chih Lin, Tiao-Yuan Huang, Chun-Yen Chang

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引用次数: 0

摘要

虽然在超薄栅极电介质中掺入氮气可以有效地降低栅极漏电流，但在本研究中，我们发现氮诱导的顺磁性电子阱前驱体将增强深亚微米nmosfet的热电子诱导降解。这些由热电子注入引起的氮相关电子陷阱最终可能成为亚100 mn技术长期可靠性的严重问题。

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Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric

Although nitrogen incorporation into ultra-thin gate dielectrics could reduce gate leakage current effectively, in this study we found that nitrogen-induced paramagnetic electron trap precursors will enhance hot-electron-induced degradation in deep sub-micron nMOSFETs. These nitrogen-related electron traps induced by hot electron injection could eventually become a severe long-term reliability concern for sub-100 mn technology.

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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