Improvement in the uniformity and the thermal stability of Hf-silicate gate dielectric by plasma-nitridation

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159180

S. Kamiyama, T. Aoyama, Y. Tsutsumi, H. Takada, A. Horiuchi, T. Maeda, K. Torii, H. Kitajima, T. Arikado

引用次数: 6

Abstract

In this study, we used HfSiO/sub x/ with Hf concentration of 60% in order to obtain a EOT less than 1.5nm, and the influence of nitrogen concentration on the electrical properties was examined.

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等离子体氮化改善硅酸铪栅极介质均匀性和热稳定性

在本研究中，我们使用HfSiO/sub x/， Hf浓度为60%，获得了小于1.5nm的EOT，并考察了氮浓度对电性能的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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