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以Hf(O/sup /C4H/sub / 9)4和Si(OC2H5)4为前驱体的气液混合沉积(VALID)硅酸铪薄膜

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159175
Y. Xuan, T. Yasuda
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引用次数: 0

摘要

以正硅酸盐为硅源，用VALID法制备了硅酸铪薄膜。它们具有良好的C-V特性，并分析了它们的漏电流密度。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Vapor-liquid hybrid deposition (VALID) of hafnium silicate films using Hf(O/sup t/C4H/sub 9/)4 and Si(OC2H5)4 precursors
Hafnium silicate films were successfully prepared by VALID using TEOS as the Si source. They show well behaved C-V characteristics, and their leakage current density was analysed.
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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)
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