用于CMOS应用的HfSiON栅极电介质

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159199

M. Takayanagi, T. Watanabe, R. Iijima, A. Kaneko, S. Inumiya, I. Hirano, K. Sekine, A. Nishiyama, K. Eguchi, Y. Tsunashima

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引用次数: 2

摘要

本文综述了MOCVD法制备HfSiON的研究成果。讨论了传统多晶硅栅极CMOS工艺制备的电容器和场效应管的特性。我们涵盖了平面带电压漂移、与HfSiON制造方法相关的有效反转层迁移率、用于50 nm cmosfet的HfSiON设计考虑以及介电可靠性等问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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HfSiON gate dielectric for CMOS applications

In this paper, we review our results on HfSiON deposited by MOCVD. Characteristics of capacitors and FETs fabricated by the conventional poly-Si gate CMOS process are discussed. We cover the issues of flatband voltage shift, effective inversion-layer mobility in relation to fabrication method of HfSiON, design consideration of HfSiON for 50 nm CMOSFETs and dielectric reliability.

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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