In-situ HfSiON/SiO2 gate dielectric fabrication using hot wall batch system

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159207

T. Aoyama, S. Kamiyama, Y. Tamura, T. Sasaki, R. Mitsuhashi, K. Torii, H. Kitajima, T. Arikado

引用次数: 5

Abstract

In this paper, we propose the novel HfSiON fabrication process using hot wall batch system, metal organic chemical vapor deposition and post deposition annealing. Properties of FETs with the HfSiON gate dielectric formed by these novel processes are also reported.

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热壁间歇系统原位制备HfSiON/SiO2栅极介质

本文提出了一种利用热壁批处理系统、金属有机化学气相沉积和沉积后退火制备HfSiON的新工艺。本文还报道了用这些新工艺制备的HfSiON栅极电介质的场效应管的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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