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Ge/HfO2在Si/HfO2 MOS系统上的进一步EOT缩放

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159209
K. Kita, M. Sasagawa, K. Tomida, M. Tohyama, K. Kyuno, A. Toriumi
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引用次数: 2

摘要

在本文中，我们描述了Ge/HfO/sub 2/和Si/HfO/sub 2/体系的物理和电学性能的全面比较。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems
In this paper, we describe a comprehensive comparision between Ge/HfO/sub 2/ and Si/HfO/sub 2/ system through physical and electrical properties.
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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)
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