空穴捕获对PMOS器件中NBTI降解和恢复的影响

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159188

H. Lin, D. Lee, S.-C. Ou, C. Chien, T. Huang

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引用次数: 5

摘要

本文研究了空穴捕获对PMOS器件负偏置温度不稳定性(NBTI)降解和恢复的影响。双栅p沟道和n沟道mosfet采用标准CMOS双阱技术制备。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices

In this paper, impacts of hole trapping on the negative bias temperature instability (NBTI) degradation and recovery in PMOS devices was investigated. Dual-gate p- and n-channel MOSFETs were fabricated using a standard CMOS twin-well technology.

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来源期刊

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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