热壁间歇系统原位制备HfSiON/SiO2栅极介质

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159207

T. Aoyama, S. Kamiyama, Y. Tamura, T. Sasaki, R. Mitsuhashi, K. Torii, H. Kitajima, T. Arikado

{"title":"热壁间歇系统原位制备HfSiON/SiO2栅极介质","authors":"T. Aoyama, S. Kamiyama, Y. Tamura, T. Sasaki, R. Mitsuhashi, K. Torii, H. Kitajima, T. Arikado","doi":"10.1109/IWGI.2003.159207","DOIUrl":null,"url":null,"abstract":"In this paper, we propose the novel HfSiON fabrication process using hot wall batch system, metal organic chemical vapor deposition and post deposition annealing. Properties of FETs with the HfSiON gate dielectric formed by these novel processes are also reported.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"26 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"In-situ HfSiON/SiO2 gate dielectric fabrication using hot wall batch system\",\"authors\":\"T. Aoyama, S. Kamiyama, Y. Tamura, T. Sasaki, R. Mitsuhashi, K. Torii, H. Kitajima, T. Arikado\",\"doi\":\"10.1109/IWGI.2003.159207\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we propose the novel HfSiON fabrication process using hot wall batch system, metal organic chemical vapor deposition and post deposition annealing. Properties of FETs with the HfSiON gate dielectric formed by these novel processes are also reported.\",\"PeriodicalId\":221442,\"journal\":{\"name\":\"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)\",\"volume\":\"26 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWGI.2003.159207\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWGI.2003.159207","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

本文提出了一种利用热壁批处理系统、金属有机化学气相沉积和沉积后退火制备HfSiON的新工艺。本文还报道了用这些新工艺制备的HfSiON栅极电介质的场效应管的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

In-situ HfSiON/SiO2 gate dielectric fabrication using hot wall batch system

In this paper, we propose the novel HfSiON fabrication process using hot wall batch system, metal organic chemical vapor deposition and post deposition annealing. Properties of FETs with the HfSiON gate dielectric formed by these novel processes are also reported.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

自引率

0.00%

发文量