XPS研究Hf键态对HfAlOx膜栅漏电流的影响

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159208

T. Nishimura, K. Iwamoto, K. Tominaga, T. Yasuda, W. Mizubayashi, S. Fujii, T. Nabatame, A. Toriumi

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引用次数: 2

摘要

在本文中，我们重点研究了N掺入对HfAlO/sub x/(N)网络栅漏电流的影响，以及对HfAlO/sub x/(N)网络键合结构的修改。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effects of nitrogen incorporation HfAlOx films on gate leakage current from XPS study of Hf bonding states

In this paper, we focus on the impact of N incorporation on the gate leakage current and the modification of the bonding configuration of HfAlO/sub x/(N) network.

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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