Gate dielectrics on strained-Ge layers on Si/sub 1-x/Gex/Si virtual substrates

Abstract

We report the deposition and physical characterization of Ge-rich layers on relaxed SiGe/Si using virtual substrate technology by low pressure chemical vapour deposition and formation of different gate dielectrics. Gate dielectrics such as GeO/sub 2/, GeO/sub x/N/sub y/ and high-k ZrO/sub 2/ have been grown using plasma enhanced chemical vapour deposition at 150/spl deg/C. MOS capacitors used in this study were fabricated directly on the Ge substrate and also the electrical characteristics were studied.