Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159203

R. Mitsuhashi, A. Horiuchi, A. Uedono, K. Torii

引用次数: 1

Abstract

In this paper we investigate the influence of O/sub 2/ partial pressure on the IL thickness during post high-k deposition annealing. The effect of high temperature annealing after IL formation on the oxidation resistance of the IL is also reported.

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多晶硅/HfAlOx栅极堆界面层热稳定性的改善

本文研究了高k沉积后退火过程中O/sub /分压对IL厚度的影响。本文还报道了IL形成后的高温退火对IL抗氧化性能的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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