实现高k栅极电介质-状态更新

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159172

S. De Gendt, J. Chen, R. Carter, E. Cartier, M. Caymax, M. Claes, T. Conard, A. Delabie, W. Deweerd, V. Kaushik, A. Kerber, S. Kubicek, J. Maes, M. Niwa, L. Pantisano, R. Puurunen, L. Ragnarsson, T. Schram, Y. Shimamoto, W. Tsai, E. Rohr, S. Van Elshocht, T. Witters, E. Young, C. Zhao, M. Heyns

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引用次数: 2

摘要

讨论了Hf-Al混合氧化物的特性及其在MOS电容器和晶体管中的应用。进行了XRD和TEM分析，并分析了结晶行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Implementation of high-k gate dielectrics - a status update

The authors discuss Hf-Al mixed oxide characteristics, and applications to MOS capacitors and transistors. XRD an TEM analyses are performed and crystallisation behaviour analysed.

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来源期刊

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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